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Electricaland Structural Characteristics Of Ultra-Thin TiO2/Ti-Si-O Stacked Gate Insulator Formed by Rf Sputtering Technique

  • M. Koyama (a1), A. Kaneko (a1), M. Koike (a1), I. Fujiwara (a1), M. Yabuki (a2), M. Yoshiki (a2), M. Koike (a2) and A. Nishiyama (a2)...

Abstract

In this paper, we have reported an attempt to decrease equivalent oxide thickness (EOT) of TiO2gate insulator by thinning the amorphous layer formed at the TiO2/Si interface. We have decreased the thickness of the TiO2/Si interfacial layer to as little as 1.6 nm by suppressing the oxygen flow rate during the TiO2 sputtering. It was confirmed that the dielectric constant of the interfacial layer revealed higher value than that of SiO2, depending on the sputtering condition. Titanium in the interfacial layer, which was responsible for the polarization enhancement, was explicitly identified by high spatial resolution TEM-EELS. As a result, EOT of 1.3 nm was realized by TiO2/Ti-Si-O stacked gate insulator without any degradation in the electrical characteristics.

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[1] Lee, J.C., Qi, W., Nieh, R., Lee, B., Kang, L., Onishi, K., Jeon, Y., and Dharmarjan, E., Workshop on High-k Gate Dielectrics, 2000 New Orlens, p23.
[2] Yamaguchi, T., Satake, H., Fukushima, N., and Toriumi, A., Technical Digest of IEDM 2000, p19.
[3] Jeon, Y., Lee, B.H.. Zawadzki, K., Qi, W-J., Lucas, A., Nieh, R., and Lee, J.C., Technical Digest of IEDM 1998, p797.
[4] Campbell, S.A., Smith, R., Hoilien, N., He, B., and Gladfelter, W.L., Workshop on High-k Gate Dielectrics, 2000 New Orlens, p9.
[5] Hobbs, C., Hegde, R., Maiti, B., Tseng, H., Gilmer, D., Tobin, P., Adetutu, O., Huang, F., Weddington, D., Nagabushnum, R., O'Meara, D., Reid, K., La, L., Grove, L., and Rossow, M., Symposium on VLSI Technology Digest of Technical papers, 1999, p133.
[6] He, B., Ma, T., Campbell, S.A., and Gladfelter, W.L., Technical Digest of IEDM 1998, p1038.

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Electricaland Structural Characteristics Of Ultra-Thin TiO2/Ti-Si-O Stacked Gate Insulator Formed by Rf Sputtering Technique

  • M. Koyama (a1), A. Kaneko (a1), M. Koike (a1), I. Fujiwara (a1), M. Yabuki (a2), M. Yoshiki (a2), M. Koike (a2) and A. Nishiyama (a2)...

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