Skip to main content Accessibility help
×
Home

Electrical Properties Of Undoped Polycrystalline Diamond Thin Films On Silicon

  • Anders Jauhiainen (a1), Stefan Bengtsson (a1) and Olof Engström (a1)

Abstract

We have investigated the electrical properties of undoped polycrystalline diamond thin films deposited on (100)-oriented n-type and p-type silicon substrates. The films, intended for electronic applications, were manufactured using hot filament chemical vapour deposition (HFCVD). To a large extent the capacitance-voltage characteristics are influenced by traps located close to the interface between the diamond layer and the silicon substrate. These traps play an important role for voltage sharing between the diamond layer and the silicon space charge region. The DC current density through the diamond film has the same functional dependence on the electric field for films deposited on both n- and p-Si. The field dependency agrees with a Frenkel-Poole transport model. Further, although the DC current transport is thermally activated, it does not follow an Arrhenius relation. A possible reason is that traps within a broad range of energy levels are involved in the charge transport. Finally, current transients resulting from stepwise changes in the applied voltage follow a power law time dependence where the kinetics depend only weakly on temperature.

Copyright

References

Hide All
1. Landstrass, M. I. and Fleetwood, D. M., Appl. Phys. Lett. 56, p. 2316 (1990)
2. Annamalai, N. K., Sawyer, J., Karulkar, P., Maszara, W. and Landstrass, M., IEEE Trans. Nucl. Sci. 40, p. 1780 (1993)
3. For a general review see for instance: Properties and Growth of Diamond edited by Davies, G. (Short Run Press Ltd., Exeter, England, 1994)
4. Söderbärg, A., Edholm, B. and Bengtsson, S. in Proc. 1995 IEEE Int. SOI Conf., Tucson, Arizona (1995), p. 104
5. Diamonex, Incorporated, Iron Run Corporate Center, 7150 Windsor Drive, Allentown, PA 18106-9328 USA
6. See for instance: Sze, S. M., Physics of Semiconductor Devices, 2nd ed. (John Wiley & Sons, New York, 1981), chapter 7
7. Liss, B. and Engstriim, O., J. Appl. Phys. 78, p. 1824 (1995)
8. Jauhiainen, A., Bengtsson, S., Engström, O., Pickrell, D. J. and Hoover, D. S. in Proc. Third Int. Symp. on Diamond Materials, edited by Dismukes, J. P. and Ravi, K. V. (The Electrochem. Soc. Hardbound Proc. Series Vol.93–17), Honolulu (1993), p. 927
9. Huang, B.-R. and Reinhard, D. K., Appl. Phys. Lett. 59, p. 1494 (1991)
10. Scher, H., Shlesinger, M. F. and Bendler, J. T., Physics Today, January, p. 26 (1991)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed