Hostname: page-component-848d4c4894-pjpqr Total loading time: 0 Render date: 2024-06-21T23:00:01.403Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical Properties Of Thin Polyimide Films Prepared By Ionized Cluster Beam Deposition

Published online by Cambridge University Press:  15 February 2011

Hyung-Jin Jung ,
Dong-Heon Lee ,
Jeon-Kook Lee  and
Chung-Nam Whang
Hyung-Jin Jung
Affiliation:
Korea Institute of Science and Technology, Division of Ceramics, Seoul, Korea
Dong-Heon Lee
Affiliation:
Korea Institute of Science and Technology, Division of Ceramics, Seoul, Korea
Jeon-Kook Lee
Affiliation:
Korea Institute of Science and Technology, Division of Ceramics, Seoul, Korea
Chung-Nam Whang
Affiliation:
Yonsei University, Physics Department, Seoul, Korea
Get access

Abstract

The electrical properties of gold – polyimide - silicon structures were investigated experimentally by capacitance – voltage (C – V) measurement. Polyimide films were deposited on silicon substrate by using ionized cluster beam deposition (ICBD) of PMDA-ODA followed by in-situ thermal curing in N2 atmosphere. The resulting C – V plots show hysteresis, and it was believed to be due to the injection of carriers. The interface trap density is fairly low because of the clean interface provided by ICB technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 227: Symposium J – Materials Science of High Temperature Polymers for Microelectronics , 1991 , 225
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Sroog, C.E., J.Polym.Sci.Macromal.Rev., 11, 161 (1976).CrossRefGoogle Scholar
2. Wilson, A.M., in Polyimides – Synthesis, Charaterization and Application, edited by Mittal, K.L. (Plenum, New York, 1984), Vol.2, p.715.Google Scholar
3. Wilson, A.M., Thin Solid Films, 83, 145 (1981).Google Scholar
4. Cho, S.J., Choe, H.S., Jang, H.G., and Whang, C.N., in Beam-Solid Interactions: Physical Phenomena, edited by Knapp, J.A., Borgesen, P., and Zuhr, R.A. (Mater. Res. Soc. Proc. 157 Boston, MA, 1989) pp. 49–53.Google Scholar
5. Deal, B., J.Electrochem.Soc., 121. 198C (1974).CrossRefGoogle Scholar
6. Goffaux, R. and Coelho, R., Rev.Gen.Electr., 78 619 (1969).Google Scholar
7. Sewell, F.A., Wegewer, H.A.R., and Lewis, E.T., Appl.Phys. Lett., 14, 45 (1969).CrossRefGoogle Scholar
8. Terman, L.M., Solid-State Electr., 5, 285 (1962).Google Scholar
9. Berglund, C.N., IEEE Trans. on Electron Devices, ED-13, 701 (1966).Google Scholar
10. Gray, P.V. and Brown, D.M., Appl.Phys.Lett., 8, 31 (1966).CrossRefGoogle Scholar
11. Nicollian, E.H. and Brews, J.R., MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, New York, 1982) p.161.Google Scholar
12. Brews, J.R., Solid-State Electron., 20, 607 (1977).Google Scholar
13. Hahn, B.R. and Yoon, D.Y., J. Appl. Phys., 65, 2766 (1989)Google Scholar