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Electrical Properties of Thin Nitrogen-Doped Ultrananocrystalline Diamond Films

  • V.I. Polyakov (a1), A.I. Rukovishnikov (a1), S.M. Pimenov (a2), J.A. Carlisle (a3) and D.M. Gruen (a3)...

Abstract

The electrical properties of ultrananocrystalline diamond (UNCD) films of approximately 1μm thickness were studied. UNCD films were deposited on p-type Si substrates from CH4/Ar/N2 gas mixtures using microwave plasma CVD techniques. It was found that the UNCD films with higher nitrogen concentration and higher electron conductivity have substantially higher concentration of shallow levels with activation energy of about 0.05 eV. The change of concentration, activation energy and capture cross-section of nitrogen-induced levels for UNCD films synthesized using different nitrogen concentration in the plasma was studied by charge– based deep level transient spectroscopy.

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Electrical Properties of Thin Nitrogen-Doped Ultrananocrystalline Diamond Films

  • V.I. Polyakov (a1), A.I. Rukovishnikov (a1), S.M. Pimenov (a2), J.A. Carlisle (a3) and D.M. Gruen (a3)...

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