Skip to main content Accessibility help

Electrical Properties of Thermally Grown SiO2-SiC Interfaces

  • Nitya N. Singh (a1), A. Rys (a1) and A. U. Ahmed (a1)


Fabrication processes of metal-oxide semiconductor (MOS) capacitors on n-type, Si-face, 6H-SiC were studied. The effects of thermal oxidation conditions at temperatures between 1100 and 1250°C on the electrical properties of MOS capacitors were determined. The wafers were annealed under argon to improve the C-V characteristics. C-V characteristics of AI-SiO2-SiC metal-oxide-semiconductor were measured at high frequency in the dark and under illumination. In the dark inversion does not occur, probably owing to the absence of minority carriers due to the large band gap of 6H-SiC. The accumulation, depletion, and inversion regions were clearly observed when the C-V measurements were made under illumination for both wet and dry thermally grown oxides. The interface trap densities and emission time constants of fast states were determined by ac conductance measurements. From the analysis of data we obtained a total of Fixed charges and the slow interface traps, Nf + NssSlow of 1.5 to 3.3 × 1012 cm-2, fast interface trap densities, NssFast of 0.5 to 1.7 × 1011 cm-2 eV-1 and emission times constant of 0.3 to 1.4 μsec for wet oxidation. For dry oxidation, Nf + N, ssSlow of 3.5 to 11.2 × 10cm-2, NssFast of 0.7 to 1.25 × 1010 cm-2 eV-1 and emission time constants of 0.6 to 2 μsec were obtained.



Hide All
1. Campbell, R. B. and Change, H. C., in Semiconductors and Semimetals, edited by Willardson, R. K. and Beer, A. C. (Academic, New York, 1971), Vol. 7, part-B, Chap. 9, 628.
2. Slack, G. A., J. Appl. Phys. 35, 3460 (1964).
3. Muench, W. V. and Pfaffender, I., J. Appl. Phys 48, 4831 (1977).
4. Muench, W. V. and Pettenpaul, E., J. Appl. Phys 48, 4823 (1977).
5. Silicon Carbide-1973, edited by Marshall, R. C., Faust, J. W. and Ryan, C. E..
6. Nieberding, W. C. and Powell, J. A., IEEE Trans. Ind. Electron. IE- 29, 103106 (1982).
7. Suzuki, A., Ikeda, M., Nagao, N., Matsunami, H. and Tanaka, T., J. Appl. Phys. 47, 4546 (1976).
8. Nishino, S., Hazuki, Y., Matsunami, H. and Tanaka, T., J. Electrochem. Soc, 127, 2674 (1980).
9. Muench, W. V. and Hoeck, P., Solid State Electron. 21, 479 (1978).
10. Tang, L. A., Edmond, J. A. and Palmour, J. W., Extended Abstract of the 176th Electrochem. Soc. Meeting, 705 (1989).
11. Suzuki, A., Mameno, K., Fumi, N. and Matsunami, H., Appl. Phys. Lett 39, 89 (1981).
12. Suzuki, A., Ashida, H., Furni, N., Mameno, K. and Matsunami, H., Jap. J. of Appl. Phys., 21 (4), 579 (1982)
13. Shibahara, K., Nishino, S. and Matsunami, H., Jpn. J. Appl. Phys., 23, 862 (1984).
14. Avila, R. E., Kopanski, J. J. and Fung, C. D., Appl. Phys. Lett., 49, 334 (1984).
15. Nicollian, E. H. and Brews, J. R., MOS Physics and Technology (John Wiley and Son, New York, 1982) 176.
16. Sze, S. M., Physics of Semiconductor Devices (Wiley, New York, 1969), Chap. 9, 425.

Electrical Properties of Thermally Grown SiO2-SiC Interfaces

  • Nitya N. Singh (a1), A. Rys (a1) and A. U. Ahmed (a1)


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed