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Electrical Properties of Schottky Junctions on homoepitaxial flame grown diamond

Published online by Cambridge University Press:  25 February 2011

J.W. Glesener ,
A.A. Morrish  and
K.A. Snail
J.W. Glesener
Affiliation:
Optical Sciences Division, Naval Research Laboratory, Code 6522, Washington, DC 20375–5000
A.A. Morrish
Affiliation:
Optical Sciences Division, Naval Research Laboratory, Code 6522, Washington, DC 20375–5000
K.A. Snail
Affiliation:
Optical Sciences Division, Naval Research Laboratory, Code 6522, Washington, DC 20375–5000
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Abstract

Schottky diodes were fabricated from boron doped diamond grown in a turbulent flame. The substrates used were type IIa diamond (100) crystals 1.5 mm in diameter and.25 mm thick. A p/p+ structure was deposited using the p+ layer as an ohmic contact. Current-voltage (I-V) and capacitance-voltage (C-V) measurements were made on the finished devices. An ideality factor of 1.8 was obtained from the I-V characteristics. Doping levels from C-V measurements indicate an acceptor concentration on the order of 5 × 1017/cm3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 161
Copyright
Copyright © Materials Research Society 1992

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References

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