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Electrical Properties of Schottky Contacts of TiW on RTCVD Si1-x-yGexCy Films

Published online by Cambridge University Press:  10 February 2011

Jian Mi ,
Yilu Zhang ,
Patricia Warren  and
Cary Y. Yang
Jian Mi
Affiliation:
Microelectronics Laboratory, Santa Clara University, Santa Clara, CA 95053
Yilu Zhang
Affiliation:
Microelectronics Laboratory, Santa Clara University, Santa Clara, CA 95053
Patricia Warren
Affiliation:
Institute for Micro- and Optoelectronics Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland
Cary Y. Yang
Affiliation:
Microelectronics Laboratory, Santa Clara University, Santa Clara, CA 95053
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Abstract

High-quality epitaxial Si1-x-yGexCy layers were grown on Si by rapid thermal chemical vapor deposition. Schottky diodes of TiW/SiGeC were fabricated using conventional Si processes. I-V and C-V measurements were performed to assess effects of crystal defects in the alloy on the electrical properties. For defective SiGeC films due to non-substitutional carbon, high series resistance and additional tunneling current were measured under forward bias, as well as leakage current under reverse bias. A transport mechanism of deep generation/recombination centers formed by carbon complexes is proposed to explain the I-V characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 470: Symposium F – Rapid Thermal and Integrated Processing IV , 1997 , 121
Copyright
Copyright © Materials Research Society 1997

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References

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