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Electrical Properties of Rutile Single Crystal Irradiated by High-Fluence-Reactor-Neutron

Published online by Cambridge University Press:  01 February 2011

Tiecheng Lu ,
Libin Lin ,
Gang Cheng ,
Xuechun Xu ,
Chunpei Zhao  and
Yunfei Tian
Tiecheng Lu
Affiliation:
Department of Physics, Sichuan University, Chengdu 610064, P. R. China, Key Lab of Irradiation Physics and Technology (Sichuan University), Ministry of Education, P. R.China International Center for Material Physics, Chinese Academy of Sciences, Shenyang 110015, P.R.China
Libin Lin
Affiliation:
Department of Physics, Sichuan University, Chengdu 610064, P. R. China, Key Lab of Irradiation Physics and Technology (Sichuan University), Ministry of Education, P. R.China
Gang Cheng
Affiliation:
Department of Physics, Sichuan University, Chengdu 610064, P. R. China, Key Lab of Irradiation Physics and Technology (Sichuan University), Ministry of Education, P. R.China
Xuechun Xu
Affiliation:
Department of Physics, Sichuan University, Chengdu 610064, P. R. China, Key Lab of Irradiation Physics and Technology (Sichuan University), Ministry of Education, P. R.China
Chunpei Zhao
Affiliation:
Analytic and Testing Center, Sichuan University, Chengdu 610064, P. R.China
Yunfei Tian
Affiliation:
Analytic and Testing Center, Sichuan University, Chengdu 610064, P. R.China
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Abstract

Electrical properties of rutile (TiO2) single crystals irradiated by high-fluence-reactor neutrons have been investigated for the first time. In this paper, the colorless rutile single crystal turns into dark blue after being irradiated by high-fluence-reactor neutrons of 1019/cm2 and its electrical properties change, from high insulator to normal semiconductor. The relationship of sample resistance to temperature (at low temperature, room temperature and high temperature, respectively) and the effect of annealing atmosphere (in air or in vacuum) on the electrical property of the sample have been studied. The results show that the sample has semiconductor properties at low temperature. At high temperature, however, it is oxidized into colorless insulator in air and the activation energy gradual changes due to slow oxidization process. In 10-4 Pa vacuum condition, TiO2 becomes a semiconductor due to the presence of ion defects. The electrical conductance mechanism is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 792: Symposium R – Radiation Effects and Ion Beam Processing of Materials , 2003 , R11.8
Copyright
Copyright © Materials Research Society 2004

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References

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