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The Electrical Properties of Polyoxide Depending on the Polycrystalline-Si Formation Conditions

  • Kyoung-Soo Yi (a1), Deok-Ho Cho (a1), Jeong Yong Lee (a2), Kee-Soo Nam (a1), Sang-Won Kang (a1) and Jin-Hyo Lee (a1)...

Abstract

Prior to growth of polyoxide, amorphous-Si with a cap of low temperature oxide was annealed to improve the dielectric property of polyoxide. Current-electric field, critical electric field, critical electric field histogram, and Fowler-Nordheim conduction plot were evaluated. The interface of polyoxide and poly-Si was observed with a transmission electron microscope. The annealing of the amorphous-Si prior to oxidation was effective to improve the dielectric property of the polyoxide.

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  • EISSN: 1946-4274
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