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Electrical Properties of Homoepitaxial Diamond Films
Published online by Cambridge University Press: 26 February 2011
Abstract
We describe the electrical characteristics of boron doped homoepitaxial diamond films fabricated using a plasma assisted CVD process, formation of ohmic contacts, high temperature (580°C) Schottky diodes, and a rudimentary diamond MESFET. We also report reversible changes of the conductive state of the diamond surface by various surface treatments for both natural and thin-film diamonds.
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- Copyright © Materials Research Society 1990
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