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Electrical Properties of Homoepitaxial Diamond Films

  • G. Sh. Gildenblat (a1), S. A. Grot (a1), C. W. Hatfield (a1), C. R. Wronski (a1) (a2) (a3), A. R. Badzian (a2), T. Badzian (a2) and R. Messier (a2) (a3)...

Abstract

We describe the electrical characteristics of boron doped homoepitaxial diamond films fabricated using a plasma assisted CVD process, formation of ohmic contacts, high temperature (580°C) Schottky diodes, and a rudimentary diamond MESFET. We also report reversible changes of the conductive state of the diamond surface by various surface treatments for both natural and thin-film diamonds.

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Electrical Properties of Homoepitaxial Diamond Films

  • G. Sh. Gildenblat (a1), S. A. Grot (a1), C. W. Hatfield (a1), C. R. Wronski (a1) (a2) (a3), A. R. Badzian (a2), T. Badzian (a2) and R. Messier (a2) (a3)...

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