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Electrical Properties of CuTCNQ Based Organic Memories Targeting Integration in the CMOS Back End-of-Line

Published online by Cambridge University Press:  01 February 2011

Robert Mueller ,
Joris Billen ,
Rik Naulaerts ,
Olivier Rouault ,
Ludovic Goux ,
Dirk J Wouters ,
Jan Genoe  and
Paul Heremans
Robert Mueller
Affiliation:
robert.muller@imec.be, IMEC vzw., SOLO / PME, Kapeldreef 75, Leuven, 3001, Belgium, ++32/16 28 19 08, ++32/16 28 10 97
Joris Billen
Affiliation:
billenj@imec.be, IMEC vzw., Kapeldreef 75, Leuven, 3001, Belgium
Rik Naulaerts
Affiliation:
Rik.Naulaerts@gmail.com, IMEC vzw., Kapeldreef 75, Leuven, 3001, Belgium
Olivier Rouault
Affiliation:
olivier.rouault@gmail.com, IMEC vzw., Kapeldreef 75, Leuven, 3001, Belgium
Ludovic Goux
Affiliation:
Ludovic.Goux@imec.be, IMEC vzw., Kapeldreef 75, Leuven, 3001, Belgium
Dirk J Wouters
Affiliation:
Dirk.Wouters@imec.be, IMEC vzw., Kapeldreef 75, Leuven, 3001, Belgium
Jan Genoe
Affiliation:
Jan.Genoe@imec.be, IMEC vzw., Kapeldreef 75, Leuven, 3001, Belgium
Paul Heremans
Affiliation:
Paul.Heremans@imec.be, IMEC vzw., Kapeldreef 75, Leuven, 3001, Belgium
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Abstract

CuTCNQ (TCNQ=7,7,8,8-tetracyanoquinodimethane) is a resistive switching charge-transfer complex which can be used for organic nonvolatile memories. In this contribution we report on a thorough investigation of the electrical switching of CuTCNQ memories. Our memories currently achieve an endurance of up to 10000 write/erase cycles with a clear distinction between ON and OFF reading currents. ON and OFF threshold voltages follow a Gaussian distribution. Temperature dependent measurements of CuTCNQ based organic memories show a semiconductor like behavior for the ON state. The retention time of the ON state exceeded 60 hours at room temperature. Electrical switching of CuTCNQ memories in air was virtually not affected by temperatures up to 80°C, but becomes erratic at 120°C. The CuTCNQ material itself already starts to decompose around 200°C in presence of oxygen as shown by thermogravimetric analysis.

Keywords

memorymetal-insulator transitionorganometallic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I01-10
Copyright
Copyright © Materials Research Society 2007

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