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Electrical Properties of 3C-SiC and its application to FET

  • S. Yoshida (a1), K. Endo (a1), E. Sakuma (a1), S. Misawa (a1), H. Okumura (a1), H. Daimon (a1), E. Muneyama (a1) and M. Yamanaka (a1)...

Abstract

Electrical and luminescent properties of nondoped, and N-doped n-type 3C-SiC layers epitaxially grown on Si(100) by chemical vapor deposition were studied. Nondoped n-type epilayers with carrier concentration of 1×1016cm−3 and the Hall mobility of 750cm2/Vs at room temperature have the activation energy of donors, Ed=2OmeV, which is different from that of the donors in the N-doped layers. The photoluminescence spectra of nondoped layers are different from those of N-doped ones. These results suggest that the donors in the unintentionally doped n-type 3C-SiC are not due to N impurities. 45–70 % of N-donors in the N-doped epilayers are compensated.

Schottky-barrier and MOS-type field-effect transistors have been fabricated from 3C-SiC. The transistor operations of MESFETs and MOSFETs were studied at elevated temperatures up to 440°C. Transconductances of 1.7mS/mm and 0.15mS/mm for MESFET and 0.8 and 0.05mS/mm for MOSFET at room temperature and 440°C, respectively, were obtained. The drain currentvoltage characteristics of both the FETs at room temperature did not change in the least after heating up to 440°C in the air.

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Electrical Properties of 3C-SiC and its application to FET

  • S. Yoshida (a1), K. Endo (a1), E. Sakuma (a1), S. Misawa (a1), H. Okumura (a1), H. Daimon (a1), E. Muneyama (a1) and M. Yamanaka (a1)...

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