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Electrical Performance and Scalability of Ni-monosilicide towards sub 0.13 μm Technologies

Published online by Cambridge University Press:  21 March 2011

Anne Lauwers ,
Muriel de Potter ,
Richard Lindsay ,
An Steegen ,
Nico Roelandts ,
Fred Loosen ,
Christa Vrancken  and
Karen Maex
Anne Lauwers
Affiliation:
IMEC, 3001 Leuven, Belgium
Muriel de Potter
Affiliation:
IMEC, 3001 Leuven, Belgium
Richard Lindsay
Affiliation:
IMEC, 3001 Leuven, Belgium
An Steegen
Affiliation:
currently at IBM, Hopewell Junction, NY 12533
Nico Roelandts
Affiliation:
IMEC, 3001 Leuven, Belgium
Fred Loosen
Affiliation:
IMEC, 3001 Leuven, Belgium
Christa Vrancken
Affiliation:
IMEC, 3001 Leuven, Belgium
Karen Maex
Affiliation:
also at INSYS, Katholieke Unversiteit Leuven, 3001 Leuven, Belgium
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Abstract

The relationship between silicide thickness, sheet resistance and silicon consumption is experimentally checked for Co-disilicide and Ni-monosilicide. The reverse bias leakage current of shallow Ni-silicided and Co-silicided square diodes is compared for varying junction depth and varying silicide thickness. A lower reverse bias leakage current is obtained for a Ni-silicided shallow junction as compared to its Co-silicided counterpart. This can be attributed to the reduced silicon consumption. The Ti cap does not play an active role during the Ni-silicidation of narrow active area and poly lines. It is shown that a Ni-silicidation process is scalable without Ti cap.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 670: Symposium K – Gate Stack and Sillicide Issues in Silicon , 2001 , K7.1
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

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