Skip to main content Accessibility help
×
Home

Electrical Contact Resistance of Electroless Nickel to Nanocrystalline Silicon and the Fabrication of a Thermoelectric Generator

  • V. Kessler (a1), M. Dehnen (a1), R. Chavez (a1), M. Engenhorst (a1), J. Stoetzel (a1), N. Petermann (a1), K. Hesse (a2), T. Huelser (a3), M. Spree (a3), G. Schierning (a1) and R. Schmechel (a1)...

Abstract

We present the fabrication of a high-temperature stable thermoelectric generator based on nanocrystalline silicon. Highly doped silicon nanoparticles were sintered by a current activated sintering technique to get nanocrystalline bulk silicon. The metalization of silicon was realized by (electro-)chemical plating and the specific electrical contact resistance ρc of the semiconductor-metal interface was measured by a transfer length method. Values as low as $\rho _C < 1 \cdot 10^{ - 6} \,\Omega cm^2 $ were measured. The metalized nanocrystalline silicon legs were sintered to metalized ceramic substrates using a silver-based sinter paste. The device figure of merit of the thermoelectric generator was determined by a Harman measurement with a maximum ZT of approximately 0.13 at 600 °C.

Copyright

References

Hide All
1. Minnich, A. J., Dresselhaus, M. S., Ren, Z. F. and Chen, G., Energy & Environmental Science 2, 466 (2009).
2. Snyder, G. J. and Toberer, E.S., Nature Materials 7, 105 (2008).
3. Schierning, G., Theissmann, R., Stein, N., Petermann, N., Becker, A., Engenhorst, M., Kessler, V., Geller, M., Beckel, A., Wiggers, H. and Schmechel, R., J. Appl. Phys. 110, 113515 (2011).
4. Bux, S. K., Blair, R. G., Gogna, P. K., Lee, H., Chen, G., Dresselhaus, M. S., Kaner, R. B., and Fleurial, J.-P., Adv. Funct. Mater. 19, 2445 (2009).
5. Harman, T. C., J. Appl. Phys. 29, 1373 (1958).
6. Hülser, T., Schnurre, S. M., Wiggers, H. and Schulz, C., KONA Powder and Particle Journal 29, 191 (2011).
7. Kessler, V., Gautam, D., Hülser, T., Spree, M., Theissmann, R., Winterer, M., Wiggers, H., Schierning, G. and Schmechel, R., Adv. Eng. Mater., DOI: 10.1002/adem.201200233
8. Sullivan, M. V. and Eigler, J. H., J. Electrochem. Soc. 104, 226 (1957).
9. Sze, S. M. and Ng, K. K., Physics of semiconductor devices, 3rd ed. (Wiley-Interscience, Hoboken, 2007) p. 179180
10. Feldstein, N., RCA Review, 317 (1970)
11. Shockley, W. in Goetzberger, A. and Scarlett, R. M, Research and Investigation of Inverse Epitaxial UHF Power Transistors, Rep. No. AFAL-TDR-64–207, Air Force Avionics Lab., Wright-Patterson Air Force Base, OH, 1964.
12. Schroder, D. K., Semiconductor Material and Device Characterization, 2nd ed. (Wiley-Interscience, New York, 1998) pp. 133199

Keywords

Electrical Contact Resistance of Electroless Nickel to Nanocrystalline Silicon and the Fabrication of a Thermoelectric Generator

  • V. Kessler (a1), M. Dehnen (a1), R. Chavez (a1), M. Engenhorst (a1), J. Stoetzel (a1), N. Petermann (a1), K. Hesse (a2), T. Huelser (a3), M. Spree (a3), G. Schierning (a1) and R. Schmechel (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed