Hostname: page-component-7bb8b95d7b-dvmhs Total loading time: 0 Render date: 2024-09-21T15:05:13.210Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical Conductivity of Silicides

Published online by Cambridge University Press:  03 September 2012

G. Ottaviani  and
F. Nava
G. Ottaviani
Affiliation:
University of Modena, Physics Department, Modena, Italy
F. Nava
Affiliation:
University of Modena, Physics Department, Modena, Italy
Get access

Abstract

Electrical transport properties of thin film and single crystal silicides will be reviewed and discussed. The presentation will be made by considering that most of the compounds behave as metals, with the resistivity which increases with the temperature, and few of them are semiconductors. Semiconductor silicides have band-gaps which span between 0.1 and 1.2 eV for ReSi2 and IrSil.75, respectively. Several metallic silicides show, expecially in the high-temperature limit, a resistivity-temperature dependence different from the classical linearity. The deviation, related to the intrinsic properties of the compound, can be affected by the presence of structural defects and impurities. The role played of such defects on the residual resistivity at low temperature will also be considered. Anisotropic effects will be discussed in relation with the shape of the Fermi surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 461
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tu, K.N. and Mayer, J.W., in Thin Films - Interdiffusion and Reactions Vol. 10, eds. Poate, J.M., Tu, K.N. and Mayer, J.W. (Wiley-Interscience, NY, 1978) p. 359.Google Scholar
2. Murarka, S.P., Silicides for VLSI Applications (Academic Press, NY, 1983)Google Scholar
3. Nava, F., Tu, K.N., Thomas, O., Senateur, J.P., Madar, R., Borghesi, A., Guizzetti, G., Gottlieb, U., Laborde, O. and Bisi, O., Materials Science Reports, 9 (1993) 141.Google Scholar
4. Auffret, S., Pierre, J., Lambert-Andron, B., Madar, R., Houssay, E., Schmitt, D. and Siaud, E., Physica B 173 (1991) 265.Google Scholar
5. Meaden, G.T., Electrical Resistivity of Metals (Plenum Press N.Y 1965).Google Scholar
6. Hurd, C.M, The Hall Effect in Metals and Alloys (Plenum Press, NY 1972).Google Scholar
7. Bass, J., Pratt, W.P. Jr., and Schroeder, P.A., Reviews of Modem Physiscs 62 (1990) 645.Google Scholar
8. Gurvitch, M., Phys. Rev. B, 24 (1981) 7404.CrossRefGoogle Scholar
9. Jones, H., Handb. Physik, 19 (1956) 227.Google Scholar
10. Blatt, F.J., J. Phys. Chem. Solids 17 (1961) 177.Google Scholar
11. Antonov, V.N., Yavorsky, B. Ya., Nemoshkalenko, V.V., Antonov, Vl.N., Jepsen, O., Andersen, O.K., Haanappel, E.G., Vosgerau, M., Joss, W., Wyder, P., Madar, R. and Rouault, A, To be published on Phys. Rev. B.Google Scholar