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Electrical Characterization of the Oxide-Silicon Carbide Interface by MOS Conductance Technique

Published online by Cambridge University Press:  26 February 2011

M. I. Chaudhry  and
W. B. Berry
M. I. Chaudhry
Affiliation:
Department of Electrical Engineering, University of Notre Dame Notre Dame, IN 46556
W. B. Berry
Affiliation:
Department of Electrical Engineering, University of Notre Dame Notre Dame, IN 46556
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Abstract

The electrical properties of the SiO2/SiC interface were studied using the conductance vs voltage (G-V) data for the metal-oxide-SiC (MOS) structure. It was found that the dry oxide contained too mjch charge either at the oxide-SiC interface or within the oxide films to obtain useful data. On the other hand the wet oxide invariably resulted in better capacitance and conductance data. The capacitance-voltage data showed that the SiC surface exhibited accumulation, depletion or inversion when the appropriate gate bias was applied. The conductance-voltage data indicate electronic surface states at the oxide-SiC interface. From this conductance data the interface state density has been estimated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 561
Copyright
Copyright © Materials Research Society 1986

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References

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