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Electrical Characterization of Some Native Insulators on Germanium

Published online by Cambridge University Press:  25 February 2011

O. J. Gregory ,
E. E. Crisman ,
Lisa Pruitt ,
D. J. Hymes  and
James J. Rosenberg
O. J. Gregory
Affiliation:
Chemical Engineering Dept. University of Rhode Island, Kingston, RI 02881
E. E. Crisman
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912
Lisa Pruitt
Affiliation:
Chemical Engineering Dept. University of Rhode Island, Kingston, RI 02881
D. J. Hymes
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912
James J. Rosenberg
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912
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Abstract

Preliminary characterization of two native insulators on germanium is reported. A technique for preparing oxide by a room temperature chemical technique (wet chemical oxidation) is described. Compositional data based on IR transmission and ellipsometry, as well as characteristics of MOS capacitors based on this film are given. Also, compositional and electrical characterization of nitrided atmospheric pressure oxides are reported here. These films have very low fixed charge and interface state densities, and show excellent potential for use as gate insulators in a germanium MOS technology.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 76: Symposium C – Science and Technology of Microfabrication , 1986 , 307
Copyright
Copyright © Materials Research Society 1987

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References

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