Hostname: page-component-848d4c4894-v5vhk Total loading time: 0 Render date: 2024-07-04T08:40:11.062Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical Characterization of Polysilicon-to-Silicon Interfaces

Published online by Cambridge University Press:  22 February 2011

E. F. Crabbé ,
J. L. Hoyt ,
R. F. W. Pease  and
J. F. Gibbons
E. F. Crabbé
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
J. L. Hoyt
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
R. F. W. Pease
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
J. F. Gibbons
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
Get access

Abstract

The structural properties of the polysilicon-to-silicon interface affect the electrical characteristics of devices with polysilicon contacts. The current characteristics of advanced bipolar transistors with polysilicon base and emitter contacts are very sensitive to the presence of interfacial oxides and segregated dopants. Hence, bipolar transistors provide an excellent tool for studying the effects of different interfaces on minority carrier transport. The transport of majority carriers through polysilicon-to-silicon interfaces is best investigated with contact resistance structures. In this paper, we review the correlation between interface morphology and the electrical properties of a variety of interfacial layers, ranging from native oxides to chemical oxides or thermal nitrides. Measurements on both npn transistors and contact resistance structures provide quantitative information on the trade-off between base current (i.e. current gain) and emitter resistance. Within this constraint, a variety of electrical characteristics can be obtained by tayloring the nature of the polysilicon-to-silicon interface to the device application of interest.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 247
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ning, T.H., Isaac, R.D., Solomon, P.M., Tang, D.D., Yu, H., Feth, G.C., and Wiedmann, S. K., Trans. Elec. Dev. 28, 1010 (1981).CrossRefGoogle Scholar
2. Loh, W.M., Swirhun, S.E., Crabbe, E.', Saraswat, K.C., and Swanson, R.M., Elec. Dev. Left. 6 (9), 441 (1985).CrossRefGoogle Scholar
3. Kwark, Y.H., Ph.D. Dissertation, Stanford Univ., May 1985.Google Scholar
4. Bravman, J.C., Patton, G.L., and Plummer, J.D., J. Appl. Phys. 57 (8), 2779 (1985).CrossRefGoogle Scholar
5. Patton, G.L., Bravman, J.C., and Plummet, J.D., Trans. Elec. Dev. 33, 1754, (1986).CrossRefGoogle Scholar
6. Wong, C.Y., Michel, A.E., and Isaac, R.D., J. Appl. Phys. 55, 1131 (1984).CrossRefGoogle Scholar
7. Crabbé, E., Swirhun, S., Alamo, J. del, Pease, R.F.W., and Swanson, R.M., in IEDM Tech. Dig., 28 (1986).Google Scholar
8. Tamura, M., Natsuaki, M., and Aoki, S., Jap. J. Appl. Phys. 24, L151 (1985).CrossRefGoogle Scholar
9. Hoyt, J.L., CrabbÉ, E., Gibbons, J.F., and Pease, R.F.W., Appl. Phys. Lett. 50, 751 (1987).CrossRefGoogle Scholar
10. Crabbé, E., Hoyt, J.L., Moslehi, M.M., Pease, R.F.W., and Gibbons, J.F., in Technical Digest: 1987 International Symposium on VLSI Technology, Systems and Applications, Taipei, Taiwan, May 13–15, 1987.Google Scholar