Skip to main content Accessibility help

Electrical Characterization of Defects Introduced in 4H-SiC During High Energy Proton Irradiation and Their Annealing Behavior

  • M. Ahoujja (a1), H. C. Crocket (a2), M. B. Scott (a2), Y.K. Yeo (a2) and R. L. Hengehold (a2)...


We report on the electrical properties of defects introduced in epitaxial 4H-SiC by 2 MeV protons using deep level transient spectroscopy (DLTS). After proton irradiation with a dose of about 1.5×1014 cm-2, the DLTS measurements were made, and the rate window shows a single broad peak between 280 and 310 K. The intensity of this peak remains unchanged after a thermal anneal at 900°C for 20 min. However, after annealing at or above 1100°C, the peak intensity gradually decreases with anneal temperature up to 1500°C, indicating a decrease in the defect concentration. Because a complete damage recovery of the SiC is not observed even after annealing at 1500°C, we believe a higher temperature annealing is necessary for a complete recovery. Using a curve fit analysis, a set of deep levels of defect centers were found with energy ranging between 567 and 732 meV. These traps do not exhibit a significant change in the trap energy or capture cross-section parameters as a function of anneal temperature, but the decrease in the trap density with increasing anneal temperature demonstrates a damage recovery.



Hide All
1. Palmour, W., et al., in Proc. Of 28th Intersociety Energy Conv. Engr. Conf., American Chemical Society, pp. 1.2491.254 (1993).
2. Bardeleben, H. J. von, Cantin, J. L., Vickridge, I., and Battistig, G., Phys. Rev. B 62, 10126 (2000).
3. Lindstrom, G., Moll, M., and Fretwurst, E., Nucl. Instrum. Methods Phys. Res. A 426, 1 (1999).
4. Hacke, P., Nakayama, H., Detchprohm, T., Hiramatsu, K., and Sawaki, N., Appl. Phys. Lett. 68, 1362 (1996)
5. Evwaraye, A. O., Smith, S. R., and Mitchel, W. C., J. of Appl. Phys. 79, 7726 (1996)
6. Schroder, D. K, Semiconductor Material and Device Characterization, 2nd Ed., New York, John Wiley & Sons, Inc., (1998) p. 290
7. Lebedev, A. A., Veinger, A. I., Davydov, D. V., Kozlovskii, V. V., Savkina, N. S., and Strel'chuk, A. M., Semiconductors 34, 1016 (2000).


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed