Skip to main content Accessibility help
×
Home

Electrical Characteristics of Crystalline Gd2O3 Film on Si (111): Impacts of Growth Temperature and Post Deposition Annealing

  • Gang Niu (a1), Bertrand Vilquin (a2), Nicolas Baboux (a3), Guillaume Saint-Girons (a4), Carole Plossu (a5) and Guy Hollinger (a6)...

Abstract

This work reports on the epitaxial growth of crystalline high-k Gd2O3 on Si (111) by Molecular Beam Epitaxy (MBE) for CMOS gate application. Epitaxial Gd2O3 films of different thicknesses have been deposited on Si (111) between 650°C~750°C. Electrical characterizations reveal that the sample grown at the optimal temperature (700°C) presents an equivalent oxide thickness (EOT) of 0.73nm with a leakage current density of 3.6×10-2 A/cm2 at |Vg-VFB|=1V. Different Post deposition Annealing (PDA) treatments have been performed for the samples grown under optimal condition. The Gd2O3 films exhibit good stability and the PDA process can effectively reduce the defect density in the oxide layer, which results in higher performances of the Gd2O3/Si (111) capacitor.

Copyright

References

Hide All
1 Norton, D.P., Mat. Sci. Eng. R 43, 139 (2004)
2 Gottlob, H.D.B. et al. , Solid-State Electron. 50 979985 (2006)
3 Laha, A. Bugiel, E. Wang, J. X. Sun, Q. Q. Fissel, A. and Osten, H. -J. Appl. Phys. Lett. 93, 182907 (2008)
4 Laha, A. Bugiel, E. Fissel, A. and Osten, H -J. Microelectron. Eng. 85, 2350 (2008)
5 Niu, G. Largeau, L. Saint-Girons, G., Vilquin, B. Cheng, J. Mauguin, O. Hollinger, G. Monolithic integration of germanium on Gd2O3Si (111) compliant substrate by molecular beam epitaxy, submitted to J. Appl. Phys. (2009)
6 Bos, Jan-Willem, Aken, Bas B. van, Palstra, Thomas T.M., Chem. Mater., 13, 48044807 (2001)
7 Kwo, J. Hong, M. Kortan, A. R. Queeney, K. L. Chabal, Y. J. Opila, R. L. Jr. , Muller, D. A. Chu, S. N. G. Sapjeta, B. J. Lay, T. S. Mannaerts, J. P. Boone, T. Krautter, H. W. Krajewski, J. J. Sergnt, A. M. and Rosamilia, J. M. J. Appl. Phys. 89, 3920, (2001)
8 Laha, A. Osten, H.-J. and Fissel, A. Appl. Phys. Lett. 89, 143514 (2006)
9 Niu, G. Vilquin, B. Baboux, N. Plossu, C. Becerra, L. Saint-Girons, G., Hollinger, G. Microelectron. Eng. 86, 1700 (2009)
10 Busseret, C. Baboux, N. Plossu, C. and Poncet, A. Proceedings of SISPAD, (unpublished), 188. (2006)
11 Palestri, P. et al. , IEEE Trans. Electron Devices 54, 106 (2007)
13 Gottlob, H. D. B. et al. IEEE Electon Device Lett. 27, 814 (2006)
14 Li, Y. Chen, N. Zhou, J. Song, S. Liu, L. Yin, Z. and Cai, C. J. Cryst. Growth 265, 548 (2004)
15 Sze, S. M. Physics of Semiconductor Devices, Wiley, New York, (1981)

Keywords

Related content

Powered by UNSILO

Electrical Characteristics of Crystalline Gd2O3 Film on Si (111): Impacts of Growth Temperature and Post Deposition Annealing

  • Gang Niu (a1), Bertrand Vilquin (a2), Nicolas Baboux (a3), Guillaume Saint-Girons (a4), Carole Plossu (a5) and Guy Hollinger (a6)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.