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Electrical Characteristics of BaxSr1-xTiO3(BST) Capacitors Implemented with Ti-Al Electrodes

  • Thottam S Kalkur (a1), Jeff Whitescarver (a2) and Nick Cramer (a3)

Abstract

Ti-Al was used as the electrode for RF magnetron sputtered BST film at a substrate temperature of 450°C for decoupling capacitor applications. X-ray diffraction analysis shows that the deposited film BST film is amorphous. Electrical characterizations of the devices performed by capacitance versus voltage measurements show a dielectric constant of about 55. With increase in annealing temperature above 450°C, the capacitance was found to decrease significantly.

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1. Kramer, N., Kalkur, T.S., Philofsky, E. and Kammerdiner, L., “Dielectric Properties of Ba0.5Sr0.5TiO3 thin films from DC to KA Band”, Integrated Ferroelectrics, vol.52, pp.413420, 2003.
2. Fuji, et al. , “ULSI DRAM Technology with BaSrTiO3 on 1.3nm equivalent SiO2 thickness and 10-9A/cm2 leakage current”, International Electron Devices Meeting (IEDM) Tech. Digest, 267270 (1992).
3. Yi, Wu, Kalkur, T.S., Kammerdiner, Lee, Philofsky, Elliott and Rywak, Tony, “Electrical Characteristics of BST films on Pt/Ti/SiO2/Si”, Thin Solid Films, Vol.402, 1-2, 307310, Feb.2002.
4. Kingon, A.I., Streiffer, S.K., Basceri, C. and Sommerfelt, S.R., MRS Bulletin, 21, 7, 46 (1996).
5. Nagel, N., Costrini, G., Lian, J., Athavale, S., Economikos, L., Baniecki, J. and Wise, M., Integrated Ferroelectrics, vol.38, 259267 (2001).
6. Cha, S.Y., Jhang, B.K., Lee, H.C., “Effect of Iridium Electrodes on the dielectric constants of BST films”, Japan Journal of Appl. Phys., vol.38, L49, (1999).
7. Cramer, N., Phiofsky, Elliot, Kammerdiner, Lee and Kalkur, T.S., MRS proceedings, vol.811, D 8.5 (2004).
8. Dhote, A.M., Auciello, O., Gruen, D.M., and Ramesh, R., “Studies of thin film growth and oxidation processes for conducting TiAl diffusion barrier layers via in situ surface sensitive analytical techniques,” Appl. Phys. Letts. 79 (6), 1 (2001).
9. Aggarwal, S., Nagaraj, B., Genkins, I., Li, H., Sharma, R.P., Salamanca-Riba, L., Ramesh, R.; Dhote, A.M., Krauss, A.R. and Auciello, O. Correlation between oxidation resistance and crystalinity of Ti-Al as barrier layer for high-density non-volatile ferroelectric memories, Acta Materialia. 48 (13) 3387 (2000)

Keywords

Electrical Characteristics of BaxSr1-xTiO3(BST) Capacitors Implemented with Ti-Al Electrodes

  • Thottam S Kalkur (a1), Jeff Whitescarver (a2) and Nick Cramer (a3)

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