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Electrical Characteristics and Device Applications of Zone-Melting-Recrystallized Si Films on SiO2

  • B-Y. Tsaur (a1), John C. C. Fan (a1), M. W. Geis (a1), R. L. Chapman (a1), S. R. J. Brueck (a1), D. J. Silversmith (a1) and R. W. Mountain (a1)...

Abstract

Device-quality Si films have been prepared by using graphite strip heaters for zone melting poly-Si films deposited on SiO2-coated substrates. The electrical characteristics of these films have been studied by the fabrication and evaluation of thin-film resistors, Mosfets and MOS capacitors. High yields of functional transistor arrays and ring oscillators with promising speed performance have been obtained for CMOS test circuit chips fabricated in recrystallized Si films on 2-inch-diameter Si wafers. Dualgate Mosfets with a three-dimensional structure have been fabricated by using the zone-melting recrystallization technique.

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