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Electrical Characterisation of P-Type CdxHg1−xTe Grown by Movpe

  • Anne Royle (a1), J S Gough (a1), S J C Irvine (a1) and J B Mullin (a1)

Abstract

The results of electrical characterisation of a series of MOVPE layers of CdxHg1−xTe (CMT) grown by the interdiffused multilayer process (IMP) are reported. It is shown that the properties of the CMT layers when grown as a “sandwich” between CdTe buffer and cap layers display classical p-type Hall effect curves. These have been modelled and the sensitivity of the fitting parameters are reported. It is shown that there is evidence of complex (“anomalous”) two-layer like behaviour in low x material which is not attributable to inversion behaviour.

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Electrical Characterisation of P-Type CdxHg1−xTe Grown by Movpe

  • Anne Royle (a1), J S Gough (a1), S J C Irvine (a1) and J B Mullin (a1)

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