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Electrical and Optical Properties of InGaN/AlGaN Double Heterostructure Blue Light-Emitting Diodes

Published online by Cambridge University Press:  10 February 2011

K. Yang
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
H. T. Shi
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
B. Shen
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
R. Zhang
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
Z. Z. Chen
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
P. Chen
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
Y. D. Zheng
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
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Abstract

In this paper, we studied the electrical and optical characteristics of Nichia double heterostructure blue light-emitting diodes, with In0.06Ga0.94N:Zn, Si active layer, at 77 and 300 K. Measurement of the forward bias current-voltage behavior of the device demonstrates a departure from the Shockley model of p-n diodes, and it is observed that the dominant mechanism of carrier transport across the junction is associated with carrier tunneling. Electroluminescence experiments of the devices were performed. We obtained an emission peak located at 2.80 eV, and a relatively weaker short-wavelength peak of 3.2 eV. A significant blue shifts of the optical emission peak which is consistent with the tunneling character of electrical characteristics was observed. Furthermore, we studied the properties of electroluminescence under various pulsed currents, and a degradation in I-V characteristics and a low resistance ohmic short were observed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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