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Electrical And Microscopic Investigation Of E-Gun Evaporated Titanium Thin Films

Published online by Cambridge University Press:  14 March 2011

Karl Hofmann ,
Martina Luysberg ,
Bernd Spangenberg  and
Heinrich Kurz
Karl Hofmann
Affiliation:
Institute of Semiconductor Technology II, RWTH Aachen Sommerfeldstr. 24 52074 Aachen, Germany
Martina Luysberg
Affiliation:
Institute of Semiconductor Technology II, RWTH Aachen Sommerfeldstr. 24 52074 Aachen, Germany
Bernd Spangenberg
Affiliation:
Institute of Semiconductor Technology II, RWTH Aachen Sommerfeldstr. 24 52074 Aachen, Germany
Heinrich Kurz
Affiliation:
Institute of Semiconductor Technology II, RWTH Aachen Sommerfeldstr. 24 52074 Aachen, Germany
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Abstract

The deposition rate of titanium films plays a determining role for possible fabrication schemes of metallic SET structures. Depending on this rate the resistivities display a striking difference in their temperature dependence which is attributed to their different crystal structure as analyzed by transmission electron-beam microscopy. In addition a sharp rise in resistivity occurs below a critical thickness in films deposited at slow rates. This sharp increase can be used in combination with a step induced thinning to form tunnel junctions for single electron transistor structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 615: Symposium G – Polycrystalline Metal & Magnetic Thin Films - 2000 , 2000 , G6.5.1
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Yu, B., Miyamoto, Y., Sugino, O., Sasaki, T., and Ohno, T., Appl. Phys. Lett. 72, 1176 (1998).10.1063/1.121005Google Scholar
2. Electronic Structure and the Properties of Solids, ed. Harrison, W. A. (W. H. Freeman and Company, San Francisco 1980), pp. 476–530.Google Scholar
3. Buot, F., Rendell, R., Snow, E., Campbell, P., Park, D., Marrian, C., and Magno, R., J. Appl. Phys. 84, 1133 (1999).10.1063/1.368114Google Scholar
4. Matsumoto, K., Gotoh, Y., Maeda, T., Dagata, J., Harris, J., Jpn. J. Appl. Phys. 38, 477 (1999).10.1143/JJAP.38.477Google Scholar
5. Lee, P., and Ramakrishnan, T., Rev. of Mod. Phys., 57, 287 (1985).10.1103/RevModPhys.57.287Google Scholar
6. Single Charge Tunneling, ed. Grabert, H., and Devoret, M.. (NATO ASI Series B Vol 294. Plenum Press, 1992).10.1007/978-1-4757-2166-9Google Scholar