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Electrical and Chemical Characterization of Contacts to Silicon Carbide

Published online by Cambridge University Press:  25 February 2011

Jeremy B. Petit  and
Mary V. Zeller
Jeremy B. Petit
Affiliation:
verdrup Technology, Inc., 2001 Aerospace Parkway, Brook Park, OH 44142
Mary V. Zeller
Affiliation:
NASA-Lewis Research Center, 21000 Brookpark Rd., Cleveland, OH 44135
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Abstract

Chemical and electrical studies were performed to determine the characteristics of contacts to 6H-SiC. Both elemental metals (Ni, Mo) and suicides (MoSi2, TaSi2, TiSi2) were studied. Chemical analysis by Auger Electron Spectroscopy (AES) was performed to examine interface reactions caused by heat treatment. Electrical measurements (current-voltage and capacitance-voltage) were made during annealing sequences to determine the rectifying or ohmic characteristics of the contacts. Where possible, barrier height and contact resistance values were calculated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 567
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Baliga, B. J., presented at the 4th ICACSC Conference, Oct. 1991, Santa Clara, CA Google Scholar
2. Cohen, S. S. and Gildenblatt, G. Sh., Metal-Semiconductor Contacts and Devices, (VLSI Electronics vol. 13, Academic Press, Inc., Orlando, 1986), pp. 97–116.Google Scholar
3. Marlow, G. S. and Das, M. B., Sol. St. Elect., 25, 91 (1982)Google Scholar
4. Reeves, G. K., Sol. St. Elect., 23, 487 (1980)CrossRefGoogle Scholar
5. Reeves, G. K. and Harrison, H. B., IEEE Elect. Dev. Lett., EDL–3, 111 (1982)Google Scholar
6. Grant, J. T. and Haas, T. W., Surf. Sci., 23, 347 (1970)Google Scholar
7. Zeller, M. V., Bellina, J., Saha, N., Filar, J., Hargraeves, J., and Will, H. A., in Novel Refractory Semiconductors, edited by Stavola, M., Pearton, S. J., and Davies, G. (Mater. Res. Proc. 97, Pittsburgh, PA, 1987), p. 283.Google Scholar