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Electric Field Induced Heating and Energy Relaxation in GaN

  • T. A. Eckhause (a1), Ö. Süzer (a1), Ç. Kurdak (a1), F. Yun (a2) and H. Morkoç (a2)...

Abstract

We report results of an investigation of electric field induced heating at low temperature in GaN 3-dimensional electron gas films grown on sapphire substrates. The excess noise of the electron gas in a patterned GaN film, while the substrate is held at low temperature, is used to determine the electron temperature. We calculate the rate of power dissipation and compare our results with a calculation of acoustic deformation potential scattering processes in GaN. We discuss the existence of a thermal boundary resistance between the GaN film and the sapphire substrate.

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Electric Field Induced Heating and Energy Relaxation in GaN

  • T. A. Eckhause (a1), Ö. Süzer (a1), Ç. Kurdak (a1), F. Yun (a2) and H. Morkoç (a2)...

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