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Electric field effect in amorphous semiconductor films assembled from transition-metal-encapsulating Si clusters

  • N. Uchida (a1), T. Miyazaki (a2), Y. Matsushita (a1) (a3), K. Sameshima (a1) (a3) and T. Kanayama (a3) (a4)...

Abstract

We synthesized amorphous semiconductor films composed of Mo-encapsulating Si clusters (MoSi n : n∼10) on solid substrates. The MoSi10 films had Si networks similar to hydrogenated amorphous Si and an optical gap of 1.5 eV. Electron spin resonance signals were not observed in the films indicating that dangling bonds of Si were terminated by Mo atoms. We fabricated thin-film-transistors using the MoSi10 film as a channel material. The electric field effect of the film was clearly observed. This suggests that the density of mid-gap states in the film is low enough for the field effect to occur.

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1.For example, Morigaki, K.: Physics of Amorphous Semiconductors (Imperial College Press and World Scientific Publishing, London, 1999) pp. 99136, 317– 366.10.1142/9789812817556_0007
2. Uchida, N., Kintou, H., Matsushita, Y., Tada, T. and Kanayama, T., Appl. Phys. Express 1 121502 (2008).10.1143/APEX.1.121502
3. Uchida, N., Miyazaki, T., Matsushita, Y., Sameshima, K and Kanayama, T., Thin Solid Films, in press.
4. Beck, S. M., J. Chem. Phys. 87 4233 (1987).10.1063/1.452877
5. Hiura, H., Miyazaki, T., and Kanayama, T., Phys. Rev. Lett. 86 1733 (2001).10.1103/PhysRevLett.86.1733
6. Uchida, N., Bolotov, L., Miyazaki, T. and Kanayama, T., J. Phys. D: Appl. Phys. 36 L43 2003.10.1088/0022-3727/36/9/101
7. Negishi, A., Kariya, N., Sugawara, K., Arai, I., Hiura, H., and Kanayama, T.: Chem. Phys. Lett. 388 463 (2004).10.1016/j.cplett.2004.03.036
8. Sun, Z., Oyanagi, H., Uchida, N., Miyazaki, T., and Kanayama, T.: J. Phys. D: Appl. Phys. 42 015412 (2009).10.1088/0022-3727/42/1/015412
9. Miyazaki, T., Uchida, N., and Kanayama, T., Phys. Stat. solidi C 7 636 (2010).
10. Shaw, L. and Abbaschian, R., J. Mater. Sci. 30 5272 (1995).10.1007/BF00356081
11. Beeman, D., Tsu, R., and Thorpe, M. F., Phys. Rev. B 32 874 (1985).10.1103/PhysRevB.32.874
12. Joannopoulos, J. D. and Lucovsky, G. ed.: The Physics of Hydrogenated Amorphous Silicon II (Springer-Verlag, 1984) pp. 169-190, 261-297.
13. Stutzmann, M., Phys. Rev. B 35 5666 (1987).10.1103/PhysRevB.35.5666
14. Skuja, L., J. of Non-Crystalline Solids 239 16 (1998).10.1016/S0022-3093(98)00720-0
15. Stutzmann, M. and Stuke, J., Philos. Mag. B 63 151 (1991).10.1080/01418639108224436
16. Okamoto, H. and Hamakawa, Y., J. Non-Cryst. Solids 77/78 1441 (1985).

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