Skip to main content Accessibility help
×
Home

Elastic Misfit Strain Relaxation in Highly Strained InAs Dots on GaAs as Studied by Tem, AFM and VFF Atomistic Calculations

  • Y. Androussi (a1), P. Francois (a1), A. Lefebvre (a1), C. Priester (a2), I. Lefebvre (a2), G. Allan (a2), M. Lannoo (a2), J. M. Moison (a3), N. Lebouche (a3) and F. Barthe (a3)...

Abstract

The deposition of InAs on GaAs results, above a 1.75 monolayer coverage, in the formation of dots on a residual 2D wetting layer. Atomic force microscopy (AFM) measurements show that these dots are in the quantum size range (height 3 nm, half-base 12 nm). Transmission electron microcopy (AFM) observations show that they are coherently strained and the corresponding strain contrast is simulated using the dynamical electron diffraction contrast theory. The dot strain fields used for the TEM contrast simulations are either deduced from continuous elastic models or determined by valence force field (VFF) atomistic calculations. That experimental TEM images and simulated images should match shows that the methods of determination of the dot strain fields are valid.

Copyright

References

Hide All
1. Asada, M., Miyamoto, Y. and Svetmasu, Y., Jpn. J; Appl. Phys., 24, L95 (1985).
2. Weisbuch, C. and Vinter, G., Quantum semiconductor Structures (Academic Press, Boston, MA, 1991).
3. Petroff, P.M., Gossard, A.C., Logan, R.A. and Wiegmann, W., Appl. Phys. Lett., 41, 635 (1982).
4. Brandt, O., Tapfer, L., Ploog, K., Bierwolf, R., Hohenstein, M., Philipp, F., Lage, H. and Heberle, A., Phys. Rev. B 44, 8043 (1991).
5. Izrael, A., Sermage, B., Marzin, J.Y., Ougazzaden, A., Azoulay, R. and Etrillard, J., Appl. Phys. lett., 59, 3577 (1991).
6. Sercel, P.C., Saunders, W.A., Atwater, H.A., Vahala, K.J. and Flagan, R.C., Appl. Phys. Lett., 61, 696 (1992).
7. Leonard, D., Krishnamurty, M., Reaves, C.M., Denbaars, S.P. and Petroff, P.M., Appl. Phys. Lett., 63, 3203 (1993).
8. Moison, J.M., Houzay, F., Bartne, F., Leprince, L., André, E. and Vatel, O., Appl. Phys. Lett. 64, 196 (1994).
9. Guha, S., Madhukar, A. and Rajkumar, K.C., Appl. Phys. Lett. 57, 2110 (1990).
10. Androussi, Y., Lefebvre, A., Courboulès, B., Grandjean, N., Massies, J., Bouhacina, T. and Aimé, J.P., Appl. Phys. Lett., 65, 1162 (1994).
11. Eaglesham, D.J. and Cernilo, M., Phys. Rev. Lett. 64, 1943 (1990).
12. Hirsch, P.B., Howie, A., Nicholson, R.B., Pashley, R.B. and Whelan, M.J., Electron Microscopy of Thin Crystals (Robert E. Krieger, New York, 1977), chapter 10.
13. Head, A.K., Aust. J. Phys., 20, 557 (1967).
14. Srolovitz, D.J., Acta Metall., 37, 621 (1989).
15. Gao, H., J. Mech. Phys., 39, 443 (1991).
16. Grilhé, J., Acta Metall. Mater., 41, 909 (1993).
17. Musgrave, M.J.P. and Popie, J.A., Proc. Roy. Soc. (London), A268, 464 (1962).
18. Priester, C., Lefebvre, I., Allan, G. and Lannoo, M. in Mechanisms of Thin Film Evolution, edited by Yalisove, S.M., Thompson, C.V. and Eaglesham, D.J. (Mater. Res. Soc. Proc. 317, Pittsburgh, PA, 1993) pp. 131136.
19. Yao, J.Y., Andersson, T.G. and Dunlop, G.L., J. Appl. Phys. 69, 2224 (1991).
20. Ashby, M.F. and Brown, L.M., Philos. Mag., 8, 1083 (1963).
21. Pidduck, A.J., Robbins, D.J., Cullis, A.G., Leong, W.Y. and Pitt, A.M., Thin Sol. Films, 222, 78 (1992).
22. Hull, R. and Fischer-Colbrie, A., Appl. Phys. Lett. 50, 851 (1987).
23. Leprince, L., Thesis, Paris XI University, 1993.

Elastic Misfit Strain Relaxation in Highly Strained InAs Dots on GaAs as Studied by Tem, AFM and VFF Atomistic Calculations

  • Y. Androussi (a1), P. Francois (a1), A. Lefebvre (a1), C. Priester (a2), I. Lefebvre (a2), G. Allan (a2), M. Lannoo (a2), J. M. Moison (a3), N. Lebouche (a3) and F. Barthe (a3)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed