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Effects of UV/O3 and SC1 Steps for the HF Last Silicon Wafer Cleaning

Published online by Cambridge University Press:  15 February 2011

Hyeongtag Jeon ,
Hyungbok Choi ,
Y. S. Cho ,
K. K. Ryoo  and
S. D. Jung
Hyeongtag Jeon
Affiliation:
Department of Metallurgical Engineering, Hanyang Univ. Seoul, Korea 133-791
Hyungbok Choi
Affiliation:
Department of Metallurgical Engineering, Hanyang Univ. Seoul, Korea 133-791
Y. S. Cho
Affiliation:
Hyundai Electronics Industries Co., Ltd. Ichon, Korea
K. K. Ryoo
Affiliation:
Research Institute of Industrial Science and Technology, Pohang, Korea
S. D. Jung
Affiliation:
Electronics and Telecommunication Research Institute, Teajon, Korea.
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Abstract

As the size of integrated circuit is scaled down, the importance of Si wafer cleaning has been emphasized. Especially, in the ULSI level device, the cleaning has a great influence on device yields and reliabilities. In this study, we investigate the effects of UV/03 and SCI steps in the HF last cleaning procedures. The UV/O3 and SCI cleaning steps are known to remove the organic contaminants. However, the combination of UV/O3 cleaning step with HF wet chemical solution to remove the metallic impurities has not been studied extensively. We have applied the UV/O3 and SCI steps in the middle of the HF last cleaning procedures and have analyzed Si substrates with TXRF, AFM, I-V, etc. The cleaning splits we applied consist with 4 different types, split 1 (piranha + HF), split 2 (piranha + UV/O3 + HF), split 3 (piranha + SC1 + HF) and split 4 (piranha + UV/O3 + HF repeated 3 times). The contents of metallic impurities were measured with using TXRF and splits 2 and 4 showed low average values of metallic contents. The surface morphologies after each cleaning examined with AFM and the split 3 exhibited rough surface. The electric properties were measured after forming a MOS capacitor with oxide thickness of 250Å. The high leakage current and low breakdown voltage were observed at split 3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 386: Symposium O – Ultraclean Semiconductor Processing Technology and Surface , 1995 , 297
Copyright
Copyright © Materials Research Society 1995

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References

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