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The Effects of Thermal and Transient Annealing on the Redistribution of Indium Implanted Silicon
Published online by Cambridge University Press: 22 February 2011
Abstract
The redistribution of indium in silicon has been studied as a function of dose during rapid thermal annealing. The results show little redistribution of indium for doses 1×1015 cm−2. For a 350keV/5×1015 cm−2 indium implant, the annealed sample showed significant indium precipitation and near surface defects. These data are contrasted to an earlier study of a 300keV/1×1015 cm−2 indium implanted silicon sample that was furnace annealed for 30 minutes at 1050°C. The furance annealed sample showed redistribution to both implant damage and the amorphous crystalline interface as well as a tail on the backside of the implant due to interstitial diffusion. This interstitial tail is clearly minimized in the transient annealed sample.
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- Copyright © Materials Research Society 1984
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