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The Effects of Temperature Ramping on MOCVD Al Film Properties

Published online by Cambridge University Press:  10 February 2011

D. Yang ,
R. Jonnalagadda ,
V. Mahadev ,
T. S. Cale ,
J. T. Hillman  and
R. F. Foster
D. Yang
Affiliation:
Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287
R. Jonnalagadda
Affiliation:
Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287
V. Mahadev
Affiliation:
Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287
T. S. Cale
Affiliation:
Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287
J. T. Hillman
Affiliation:
Materials Research Corporation, 2120 W. Guadeloupe Road., Gilbert, AZ 85233–2805
R. F. Foster
Affiliation:
Materials Research Corporation, 2120 W. Guadeloupe Road., Gilbert, AZ 85233–2805
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Abstract

We present and discuss experiments designed to demonstrate the effects of ramping substrate temperature during the deposition of TIBA sourced aluminum on Si(100) and TiNx coated silicon (TiN) wafers. We also present results from experiments in which the precursor flow was pulsed (started and stopped) for a short time at a higher temperature followed by temperature ramp down and deposition at a lower (constant) temperature on TiN wafers. Aluminum growth rates and crystal orientation data are presented for different deposition conditions on Si(100) wafers. Aluminum nucleation densities, crystal orientation, average grain size, surface roughness, growth rate and resistivity data are presented for different deposition conditions on TiN wafers. During substrate temperature ramp down from 673 K on TiN wafers, when the precursor flow was pulsed for a short time at higher temperatures, and then resumed at a lower (constant) temperature 573 K, there was a significant increase in both deposition rates and fraction of (111) orientation. The resistivities of these films were close to that of bulk aluminum. Films deposited during substrate temperature ramp down on TiN substrates resulted in higher fractions of (111) oriention and higher resistivities as compared to the films deposited at constant substrate temperature and during the ramp up of substrate temperature. The films deposited on Si(100) wafers during substrate temperature ramp down from 673 K to 573 K had strong Al(200) orientation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 472: Symposium I – Polycrystalline Thin Films - Structure, Texture, Properties..III , 1997 , 337
Copyright
Copyright © Materials Research Society 1997

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References

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