Hostname: page-component-8448b6f56d-c47g7 Total loading time: 0 Render date: 2024-04-20T01:56:55.176Z Has data issue: false hasContentIssue false

Effects of Ta on the Microstructure and Magnetic Properties of FePt Thin Films

Published online by Cambridge University Press:  21 March 2011

Sangho Jin
Affiliation:
Materials Science and Engineering, POSTECH, Hyoja-Dong, Nam-Gu, Pohang, 790–784, Korea, Republic of
Sung Uk Jang
Affiliation:
Materials Science and Engineering, POSTECH, Hyoja-Dong, Nam-Gu, Pohang, 790–784, Korea, Republic of
Soon-Ju Kwon
Affiliation:
Materials Science and Engineering, POSTECH, Hyoja-Dong, Nam-Gu, Pohang, 790–784, Korea, Republic of
Get access

Abstract

We have studied the effect of Ta on the structure, magnetic properties and the ordering temperature of FePt(Ta) thin films. The samples are prepared by the dc and rf magnetron cosputtering method with 3 single element targets. After a deposition, the samples are annealed in a vacuum at various temperatures. The XRD patterns show strong (111) peaks at all annealing temperatures, but the change in the d-spacings reveals a disorder-order transformation. The more Ta is added to the FePt, the larger the coercivity becomes. The coercivity of the FePtTa40W film annealed at 700°C reaches about two times as large as the value of the pure FePt film. The delta m curves imply that Ta atoms diffuse into the grain boundary to reduce inter-granular exchange coupling, which leads the enhancement of coercivity

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Klemmer, T., Hoydick, D., Okumura, H., Zhang, B., and Soffa, W. A., Scr. Metall. Mater. 33, 1 793 (1995)Google Scholar
2. Luo, C. P., Liou, S. H., Gao, L, Liu, Y., and Sellmyer, D. J., Appl. Phys. Lett. 77, 2225 (2000)Google Scholar
3. Farrow, R. F. C., Weller, D., Marks, R. F., Toney, M. F., Cebollada, A., and Harp, G. R., J. Appl. Phys. 79, 5967 (1996)Google Scholar
4. Laiirson, B. M. and Clemens, M. M., Appl. Phys. Lett. 63, 1438 (1993)Google Scholar
5. Zhao, Z. L., Ding, J., Inaba, K., Chen, J. S., and Wang, J. P., Appl. Phys. Lett. 83, 2196 (2003)Google Scholar
6. Hsu, Y. N., Jeong, S., Langhlin, D. E., and Lambeth, D. N., J. Appl. Phys. 89, 7068 (2001)Google Scholar
7. Takahashi, Y. K., Ohnuma, M., and Hono, K., J. Magn. Magn. Mater. 246, 259 (2002)Google Scholar
8. Klug, H. P. and Alexander, L. E., X-ray Diffraction Procedures for Polycrystalline and Amor phous Materials. (Wiley, New York, 1954), Chap 9Google Scholar
9. Wolfarth, E. P., J. Appl. Phys. 29, 595 (1958)Google Scholar
10. Mayo, P. I., O'Grady, K., Kelly, P. E., Cambridge, J., Sanders, I. L., Yogi, T., and Chantr, R. W. ell, J. Appl. Phys. 69, 4733 (1991)Google Scholar