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The Effects of Surface Treatments for Low Temperature Silicon Dioxide Deposition on Cadmium Telluride.

Published online by Cambridge University Press:  25 February 2011

Seong S. Choi ,
S. S. Kim ,
D. V. Tsu  and
G. Lucovsky
Seong S. Choi
Affiliation:
Departments of Physics and Materials Science and Engineering, North Carolina State University, Raleigh, N.C. 27695-8202
S. S. Kim
Affiliation:
Departments of Physics and Materials Science and Engineering, North Carolina State University, Raleigh, N.C. 27695-8202
D. V. Tsu
Affiliation:
Departments of Physics and Materials Science and Engineering, North Carolina State University, Raleigh, N.C. 27695-8202
G. Lucovsky
Affiliation:
Departments of Physics and Materials Science and Engineering, North Carolina State University, Raleigh, N.C. 27695-8202
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Abstract

We have successfully deposited thin films of SiO2 on a cadmium telluride substrate at low temperature (Ts =100°C–300°C) by remote plasma enhanced chemical vapor deposition (Remote PECVD). The native oxide on the CdTe substrate has been removed, prior to deposition by either chemical etching in methanol and 1% bromine, or by dissolution in deionized water. After removal of the native oxide, the CdTe was inserted into a UHV-compatible deposition chamber and a He+ plasma treatment was performed prior to deposition of an SiO2 film. This treatment promotes strong adhesion between the deposited SiO2 film and the CdTe surface. We find that the initial oxide removal process does not influence SiO2 adhesion. The effect of the He+ plasma treatment on the CdTe surface has been studied by Auger electron spectroscopy(AES), and Reflection high energy electron diffraction (RHEED).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 313
Copyright
Copyright © Materials Research Society 1989

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References

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