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Effects of Surface Stress on the Load-Depth Curves of Depth-Sensing Indentation

Published online by Cambridge University Press:  01 February 2011

Q. Wang  and
K. Ozaki
Q. Wang
Affiliation:
Digital Manufacturing Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 305–8564, Japan Email: q.wang@aist.go.jp
K. Ozaki
Affiliation:
Digital Manufacturing Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 305–8564, Japan Email: q.wang@aist.go.jp
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Abstract

Based on the effects of residual surface stress on the unloading curves of indentation load-depth responses, an experimental scheme for determination of the residual stress by depth-sensing indentation is proposed. From the point that the elastic unloading portion of the load-depth curves can be expected to be unaffected by the residual stresses, the formula for evaluating surface stress by indentation is derived based on energy method. The proposed formula is verified by using FEM simulated indentation load-depth responses for different surface stress levels. The levels of surface stress evaluated by the proposed formula show a good agreement with the ones used as input parameters in FEM simulation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 841: Symposium R – Fundamentals of Nanoindentation and Nanotribology III , 2004 , R9.4
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Oliver, W.C. and Pharr, G.M., J. Mater. Res. 7, 1564 (1992).Google Scholar
2. Fischer-Cripps, A.C., Nanoindentation, Springer-Verlag, New York (2002).Google Scholar
3. LaFontaine, W.R., Paszkiet, C.A., Korhonen, M.A. and Li, C.Y., J. Mater. Res. 6, 2084 (1991).Google Scholar
4. Tsui, T.Y., Oliver, W.C. and Pharr, G.M., J. Mater. Res. 11, 752 (1996).Google Scholar
5. Suresh, S. and Giannakopoulos, A. E., Acta Mater. 46, 5755 (1998).Google Scholar
6. Taljat, B. and Pharr, G.M., Mater. Res. Soc. Symp. Proc. 594, 519 (2000).Google Scholar
7. Swadener, J.G., Taljat, B., Pharr, G.M., J. Mater. Res. 16, 2091 (2001).Google Scholar
8. Carlsson, S. and Larsson, P.L., Acta Mater. 49, 2179 (2001).Google Scholar
9. Lee, Y.H. and Kwon, D., J. Mater. Res. 17, 901 (2002).Google Scholar
10. Lee, Y.H. and Kwon, D., Scripta Mater. 49, 459 (2003).Google Scholar
11. Lepienski, C. M., Pharr, G. M., Park, Y. J., Watkins, T. R., Misra, A. and Zhang, X., Thin Solid Films, 447–448, 251 (2004).Google Scholar