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Effects of Surface and Interlayer Processing Conditions on Selected Ohmic Contact Metallizations for p-type Silicon Carbide

Published online by Cambridge University Press:  21 March 2011

L. M. Porter ,
T. Jang ,
T. Worren ,
K. C. Chang ,
N. A. Papanicolaou  and
J. W. Erickson
L. M. Porter
Affiliation:
Dept. of Materials Science & Engineering, Carnegie Mellon University, Pittsburgh, PA 15213.
T. Jang
Affiliation:
Dept. of Materials Science & Engineering, Carnegie Mellon University, Pittsburgh, PA 15213.
T. Worren
Affiliation:
Dept. of Materials Science & Engineering, Carnegie Mellon University, Pittsburgh, PA 15213.
K. C. Chang
Affiliation:
Dept. of Materials Science & Engineering, Carnegie Mellon University, Pittsburgh, PA 15213.
N. A. Papanicolaou
Affiliation:
Naval Research Laboratory, 7565 Overlook Avenue, Washington, D.C. 20375.
J. W. Erickson
Affiliation:
Accurel Systems, 350 Potrero Avenue, Sunnyvale, CA 94086.
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Abstract

A comparative study of Pt and Pt/Si contacts to p-type 6H-SiC in terms of various processing conditions and interlayer specifications was performed. Deposition temperature, the thickness of the Si layer, and B-dopant incorporation in the Si were found to significantly affect the specific contact resistivity (SCR) values. In addition, pre-etching of the SiC surface in SF6 + Ar was found to consistently reduce the SCR's. The lowest average SCR values were 3 × 10−5 Ωcm2 for Pt/Si/SiC contacts deposited on pre-etched SiC surfaces (7.0 × 1018 cm−3 doping concentration) and annealed at 1100 °C for 5 min.

Aluminum-titanium contacts also showed dependence on the thicknesses of the Al and Ti layers and on the locations of the layers. Differences in both the SCRs and surface morphology are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H7.1
Copyright
Copyright © Materials Research Society 2001

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References

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