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Effects of Substrate Misorientation Direction on Strain Relaxation at InGaAs/GaAs(001) Interfaces

Published online by Cambridge University Press:  15 February 2011

R.S. Goldman ,
H.H. Wieder  and
K.L. Kavanagh
R.S. Goldman
Affiliation:
University of California, San Diego, La Jolla, CA 92093-0407
H.H. Wieder
Affiliation:
University of California, San Diego, La Jolla, CA 92093-0407
K.L. Kavanagh
Affiliation:
University of California, San Diego, La Jolla, CA 92093-0407
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Abstract

We have investigated the effects of substrate misorientation direction on strain relaxation at InGaAs/GaAs(001) interfaces. Calculations of the shear stresses due to the misfit strain, resolved on the glide plane in the glide direction, suggest that the dislocation glide force and the activation energy for dislocation nucleation are essentially identical for the α and β slip systems. However, experimental results indicate that asymmetries in strain relaxation are sensitive to A-type misorientation and/or step-edge densities. Thus, a dislocation nucleation source or glide velocities sensitive to step densities or local roughness may explain these results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 21
Copyright
Copyright © Materials Research Society 1995

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References

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