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Effects of substrate bias on the properties of a-C:H films by DC saddle-field plasma enhanced CVD

Published online by Cambridge University Press:  10 February 2011

Young-Zo Yoo ,
HyoGun Kim ,
HongKyu Jang ,
YoungGeun Jeong  and
Geunsik Kima
Young-Zo Yoo
Affiliation:
Dept. of Material Science and Engineering, Kwangju Institute of Science & Technology, 572, Ssangam-dong, Kwangsan-ku, Kwangju, 506–712, Korea
HyoGun Kim
Affiliation:
Dept. of Material Science and Engineering, Kwangju Institute of Science & Technology, 572, Ssangam-dong, Kwangsan-ku, Kwangju, 506–712, Korea
HongKyu Jang
Affiliation:
Thin Film Technology Team, Kumho Information & Telecommunications Laboratory, 572, Ssangam-dong, Kwangsan-ku, Kwangju, 506–712, Korea
YoungGeun Jeong
Affiliation:
Thin Film Technology Team, Kumho Information & Telecommunications Laboratory, 572, Ssangam-dong, Kwangsan-ku, Kwangju, 506–712, Korea
Geunsik Kima
Affiliation:
Thin Film Technology Team, Kumho Information & Telecommunications Laboratory, 572, Ssangam-dong, Kwangsan-ku, Kwangju, 506–712, Korea
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Abstract

Hydrogenated amorphous carbon (a-C:H) films were deposited on p-type Si(100) at room temperature by DC saddle-field plasma enhanced CVD using pure methane gas and diluted methane gas by inert gas. The effect of substrate bias (Vs) from 0 V to 400 V on deposition rate, hydrogen content, chemical bonding of the films have been investigated. FT-IR spectrum shows that a-C:H films consist of sp2 and sp3 bondings and the relative intensity ratio of sp2 and sp3,I(sp2)/I(sp3), decreases from 0.28 to 0.19 as the substrate bias changes from 0 V to 400 V. Deposition rates of the films rapidly decrease with increasing Vs up to 200 V, and then slightly decrease over Vs = 200 V. The hydrogen content of the films increase as Vs goes higher and the number of C-H bonds of a-C:H shows the same trend. Only in the range of Vs=0 V and Vs=100 V the Raman band of graphite and disorder is observed. The emission of white photoluminescence (PL) light from the films is observed with the naked eye even at room temperature. The intensity of PL has a maximum at Vs=200 V, then decreases as the Vs changes from 200 V to 400 V. The PL peak shifts to higher energy from 2.15 eV at 100V to 2.45 eV at Vs=400 V. The PL at Vs = 400 V was two times stronger without a peak shift by using an inert gas dilution into methane source compared with that of a film deposited using pure methane.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 498: Symposium AA – Covalently Bonded Disordered Thin-Film Materials , 1997 , 171
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Tsai, H-C., J. Vac. Sci. Technol. A 5, 3287 (1987)Google Scholar
2. kononenko, T. V., Thin Solid films. 254, 92 (1995)Google Scholar
3. Hanakawa, Y., J. Non-Cryst. Solids. 115, 180 (1989)Google Scholar
4. Silva, S. R. P., J. Non-Cryst. Solids. 198–200, 611 (1996)Google Scholar
5. Zukotynski, S., J. Vac. Sci. Technol. A 9, 496 (1991)Google Scholar
6. Zou, J. W., J. Appl. Phys. 66, 4730 (1989)Google Scholar
7. Grill, A., IBM J. Res. Develop. 34, 849 (1990)Google Scholar
8. Zou, W., J. Appl. Phys. 67 487(1990)Google Scholar
9. Kamata, K., J. Appl. Phys. 78, 1394 (1995)Google Scholar
10. Zukotynski, S., Material Science Forum. 140–142, 89 (1993)Google Scholar
11. Couderc, P., Thin Solid films. 146, 93 (1987)Google Scholar
12. Xu, N., J. Phys. D: Appl. Phys. 30, 763 (1997)Google Scholar
13. Gaspari, F. and Zukotynski, S., Mater. Res. Soc. Symp. Proc. 420, 375 (1996)Google Scholar
14. Richer, A., J. Non-Cryst. Solids. 88, 13 (1986)Google Scholar
15. Ramsteiner, M., Appl. Phys. Lett. 51, 1355 (1987)Google Scholar
16. Yoshikawa, M., J. Appl. Phys. 64, 6464 (1988)Google Scholar
17. Saitoh, H. and Maruyama, K., J. Appl. Phys. 78, 1394 (1995)Google Scholar
18. Demichelis, F., Phys. Rev. B 51, 2143 (1995)Google Scholar
19. Silva, S.R.P., Thin Solid films. 270, 160 (1995)Google Scholar
20. Lin, S. and Feldman, B. J., Solid State Communications. 82, 79 (1992)Google Scholar
21. Xu, S., J. Non-Cryst. Solids. 164–166, 1127 (1993)Google Scholar
22. Robertson, J., Non-Cryst. Solids. 164–166, 1115 (1993)Google Scholar
23. Kawamura, K., Jap. J. Appl. Phys. 30, LI539 (1991)Google Scholar
24. Koos, M., Appl. Phys. Lett. 65, 2245 (1994)Google Scholar
25. Robertson, J., Adv. Phys. 35, 317 (1986)Google Scholar