Hostname: page-component-8448b6f56d-dnltx Total loading time: 0 Render date: 2024-04-20T02:16:23.188Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Sputtered Ir and IrO2 Electrodes on the Properties of PZT Thin Films Deposited By MOCVD

Published online by Cambridge University Press:  10 February 2011

M. Shimizu ,
H. Fujisawa ,
S. Hyodo ,
S. Nakashima ,
H. Niu ,
H. Okino  and
T. Shiosaki
M. Shimizu
Affiliation:
Department of Electronics, Faculty of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo 671-22, Japan, mshimizu@elnics.eng.himeji-tech.ac.jp
H. Fujisawa
Affiliation:
Department of Electronics, Faculty of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo 671-22, Japan, mshimizu@elnics.eng.himeji-tech.ac.jp
S. Hyodo
Affiliation:
Department of Electronics, Faculty of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo 671-22, Japan, mshimizu@elnics.eng.himeji-tech.ac.jp
S. Nakashima
Affiliation:
Department of Electronics, Faculty of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo 671-22, Japan, mshimizu@elnics.eng.himeji-tech.ac.jp
H. Niu
Affiliation:
Department of Electronics, Faculty of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo 671-22, Japan, mshimizu@elnics.eng.himeji-tech.ac.jp
H. Okino
Affiliation:
Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University, Yoshida Honmachi, Sakyo-ku, Kyoto 606, Japan
T. Shiosaki
Affiliation:
Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University, Yoshida Honmachi, Sakyo-ku, Kyoto 606, Japan
Get access

Abstract

The effect of bottom electrode thickness on the electrical properties of PZT capacitors with Ir and IrO2, electrodes was investigated, with particular attention to switching endurance characteristics. Ir and IrO2 electrodes were prepared by rf magnetron sputtering. PZT films were grown by MOCVD. Secondary ion mass spectrometry (SIMS) analysis showed thick Ir and IrO2 electrodes performed well as a barrier to the PZT elements. On the other hand, strong diffusion at the interface between PZT and the electrodes was observed, when the Ir and IrO2 electrodes were thin. From transmission electron microscope (TEM) observation, it was also found that there was an amorphous intermediate layer at the interface between the PZT and the thick Ir bottom electrode. The switching endurance characteristics were influenced by the thickness of the Ir bottom electrode.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 159
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nakamura, J. T., Nakao, Y., Kamisawa, A. and Takasu, H., Appl. Phys. Lett. 65, 1522(1994).Google Scholar
2. Nakamura, T., Nakao, Y., Kamisawa, A. and Takasu, H., Jpn. J. Appl. Phys. 33, 5207(1994).Google Scholar
3. Aoki, K., Fukuda, Y., Numata, K. and Nishimura, A., Jpn. J. Appl. Phys. 34, 5250(1995).Google Scholar
4. Aoki, K., Fukuda, Y. Numata, K. and Nishimura, A., Ext. Abs. Of the Third Pacific Rim Conference on Ferroelectric Applications (May 27-29, Kyoto, japan, 1996) pp. 87–90.Google Scholar
5. Aoki, K., Fukuda, Y., Numata, K. and Nishimura, A. Ext. Abs. Of the Eighth US-Japan Seminor on Dielectric and Piezoelectric Ceramics (Oct. 15-18, Plymouth, MA, USA, 1997) pp. 74–79.Google Scholar
6. Kuah, S., Balu, V., Chen, T., Jiang, B., Hadad, D., White, B., Jones, R. E., Zurcher, P., Melnic, B., Gllespie, S. and Lee, J. C., Proc. of 9th Int. Symp. on Integrated Ferroelectrics (Mar.2-5, Santa Fe, NM, USA, 1997)(in press).Google Scholar
7. Shimizu, M. and Shiosaki, T. in Ferroelectric Thin Films IV. edited by Tuttle, B. A., Desu, S. B.. Ramesh, R. and Shiosaki, T. (Mater. Res. Soc. Symp. Proc. 361, Pittsburgh, PA, 1995) pp. 295–305.Google Scholar
8. Shimizu, M., Nakao, K., Okino, H., Fujisawa, H. and Shiosaki, T., Ext. Abs. of the Seventh US-Japan Seminor on Dielectric and Piezoelectric Ceramics (Nov. 14-17, Tsukuba, Japan, 1995) pp. 40–43.Google Scholar
9. Shimizu, M. and Shiosaki, T. in Ferroelectric Thin Films V. edited by Desu, S. B., Ramesh, R., Tuttle, B. A., Jones, R. E. and Yoo, I. K. (Mater. Res. Soc. Symp. Proc. 433, Pittsburgh, PA, 1996) pp. 129–138.Google Scholar
10. Shimizu, M., Okono, H., Fujisawa, H. and Shiosaki, T., Proc. of the Tenth IEEE Int. Symp. on the Applications of Ferroelectrics (IEEE Service Center, Piscataway, NJ, USA, 1996) pp. 471–474.Google Scholar