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Effects of Silicon Ion Implantation upon Thin Gate Oxide Integrity

  • G. -S. Lee (a1), J. -G. Park (a1), S. -P. Choi (a1), C. -H. Shin (a1), Y. -B. Sun (a1), Y. -S. Kwak (a1), C. -K. Shin (a1), W. L. Smith (a2) and S. Hahn (a3)...

Abstract

In this study, using oxide breakdown voltage and time-dependent-dielectric breakdown measurements, thermal wave modulated reflectance and chemical etching/optical microscopy, we investigated effects of Si ion implantation upon formation of D-defects and thin gate oxide integrity. Our data show that addition of Si ion implantation with a dose of up to 1013 ions/cm2 improves oxide integrity if the implantation is done at a certain step just before sacrificial oxidation in the Mb DRAM process. However, no improvement in oxide integrity is observed when the same implantation is done on the virgin wafer surfaces at the start of the same Mb DRAM process. We discuss our hypothesis that the improvement in oxide integrity is due to a reduction in the D-defect density in the near-surface region of the wafer.

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Effects of Silicon Ion Implantation upon Thin Gate Oxide Integrity

  • G. -S. Lee (a1), J. -G. Park (a1), S. -P. Choi (a1), C. -H. Shin (a1), Y. -B. Sun (a1), Y. -S. Kwak (a1), C. -K. Shin (a1), W. L. Smith (a2) and S. Hahn (a3)...

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