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The Effects of SI Addition on the Properties of AICu Films used in Multilevel Metal Systems

Published online by Cambridge University Press:  25 February 2011

S. R. Wilson ,
D. Weston  and
M. Kottke
S. R. Wilson
Affiliation:
Advanced Technology Center, Motorola Semiconductor Products Sector, 2200 W.Broadway Rd., Mesa, AZ 85202
D. Weston
Affiliation:
Advanced Technology Center, Motorola Semiconductor Products Sector, 2200 W.Broadway Rd., Mesa, AZ 85202
M. Kottke
Affiliation:
Advanced Technology Center, Motorola Semiconductor Products Sector, 2200 W.Broadway Rd., Mesa, AZ 85202
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Abstract

This paper reports a systematic study of the properties of Al(Cu 0.5-1.5%) and Al(Cu 0.5-1.5%, Si 0.5-1.5%)alloys. The effects of deposition temperatures ranging from room temperature to 475°C were studied as well as whether the films were deposited on Ti-W or SiO2. The Cu and Si profiles were measured as well as the presence of Al2Cu and Si precipitates. The effects of post deposition bake treatments are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 545
Copyright
Copyright © Materials Research Society 1990

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References

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