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Effects of Se implantation on the compositional disordering of GaAs-AlAs superlattices

  • T. NAKAMURA (a1), S. KOMIYA (a1), T. INATA (a1), S. MUTO (a1) and S. HIYAMIZU (a1)...

Abstract

The LO phonon frequency evaluated from Raman spectra identifies two compositional disordering mechanisms in GaAs-AlAs superlattices. For a high Se dose, the LO phonons of the Al0.5Ga0.5As alloy are observed from the asimplanted samples. That means the compositional disordering occurred just by Se implantation. The probable mechanism for this disordering is the implantation of Ga atoms into the AlAs layer and of Al atoms into the GaAs layer. The superlattices implanted at a low dose are disordered by the subsequent annealing. The mechanism is the enhanced interdiffusion of both Ga and Al atoms between the GaAs and AlAs layers by Se thermal diffusion.

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Effects of Se implantation on the compositional disordering of GaAs-AlAs superlattices

  • T. NAKAMURA (a1), S. KOMIYA (a1), T. INATA (a1), S. MUTO (a1) and S. HIYAMIZU (a1)...

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