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Effects of Sapphire Substrate Configurations on MBE Growth of ZnO

  • Keiichiro Sakurai (a1), Ken Nakahara (a2), Tetsuhiro Tanabe (a2), Shizuo Fujita (a2) and Shigeo Fujita (a2)...

Abstract

MBE growth of ZnO films for optical semiconductor devices was investigated on off-angled c-plane sapphire substrates. Twin crystal RHEED patterns and surface facetting observed with c-plane just-oriented substrates were suppressed by enlarging the offset angles from near-zero to 2.87 degrees. Though no significant changes were seen in optical characteristics, FWHM of XRC narrowed and surface morphology improved with larger offset angles, indicating that the offset angle is also a sensitive factor for ZnO film growth.

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[1] Fons, P., Iwata, K., Niki, S., Yamada, A., Matsubara, K., J. Crystal Growth 201/202, 627 (1999).
[2] Ohnishi, T., Ohtomo, A., Kawasaki, M., Takahashi, K., Yoshimoto, M., Koinuma, H., Appl. Phys. Lett. 72, 824 (1998).
[3] Kang, H.B., Nakamura, K., Yoshida, K., Ishikawa, K., Jpn. J. Appl. Phys. 36 L933 (1997).
[4] Sakurai, K., Kanehiro, M., Nakahara, K., Tanabe, T., Fujita, Sz., Fujita, Sg., presented at the Intl. Conf. on Chemical Beam Epitaxy (Tsukuba, 1999), J. Crystal Growth (in press).

Effects of Sapphire Substrate Configurations on MBE Growth of ZnO

  • Keiichiro Sakurai (a1), Ken Nakahara (a2), Tetsuhiro Tanabe (a2), Shizuo Fujita (a2) and Shigeo Fujita (a2)...

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