Hostname: page-component-788cddb947-kc5xb Total loading time: 0 Render date: 2024-10-15T04:52:49.040Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Potassium on the Adsorption and Reactions of Nitric Oxide on Silicon Surface

Published online by Cambridge University Press:  25 February 2011

Z. C. Ying  and
W. Ho
Z. C. Ying
Affiliation:
Laboratory of Atomic and Solid State Physics and Materials Science Center Cornell University, Ithaca, New York, 14853
W. Ho
Affiliation:
Laboratory of Atomic and Solid State Physics and Materials Science Center Cornell University, Ithaca, New York, 14853
Get access

Abstract

The adsorption, thermoreactions, and photoreactions of NO coadsorbed with K on Si(111)7×7 at 90 K have been studied and compared with the results obtained from the Kfree surface. The experiments were performed under ultra-high vacuum conditions using high resolution electron energy loss spectroscopy, work function change measurements, and mass spectrometry. NO adsorbs both molecularly and dissociatively on the K-free surface. Two molecular N–O stretching modes are observed at 188 and 225 meV. The concentration of these NO molecules on the surface decreases as the K exposure increases and vanishes at high K exposures. A new N–O stretching mode, attributed to adsorption of NO molecules on K clusters, is observed at 157 meV. After thermal heating or photon irradiation, the surface is covered with atomic O and N. The surface is more oxidized in the presence of K. A steady decrease in the photodesorption cross section is observed as the K exposure increases and is attributed to K-induced band structure changes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 209
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Aruga, T., Tochihara, H., and Murata, Y., Phys. Rev. Lett. 53, 372 (1984).Google Scholar
2 Soukiassian, P., Gentle, T.M., Bakshi, M.H., and Hurych, Z., J. Appl. Phys. 60, 4339 (1986); E.M. Oellig, E.G. Michel, M.C. Asensio, and R. Miranda, Appl. Phys. Lett. 50, 1660 (1987).Google Scholar
3 Soukiassian, P., Bakshi, M.H., Starnberg, H.I., Hurych, Z., Gentle, T.M., and Schuette, K.P., Phys. Rev. Lett. 59, 1488 (1987).Google Scholar
4 Chuang, T.J., Surf. Sci. Rep. 3, 1 (1983).Google Scholar
5 Ho, W., Comments Cond. Matter Phys. 13, 293 (1988).Google Scholar
6 Ying, Z. and Ho, W., Phys. Rev. Lett. 60, 57 (1988).Google Scholar
7 Ying, Z. and Ho, W., J. Vac. Sci. Technol. A 7, 000 (1989).Google Scholar
8 Ying, Z. and Ho, W., Surf. Sci. 198, 473 (1988).Google Scholar
9 So, S. K. (private communication).Google Scholar
10 Ekwelundu, E. and Ignatiev, A., Surf. Sci. 179, 119 (1987).Google Scholar
11 Many, A., Goldstein, Y., and Grover, N.B., Semiconductor surfaces (North-Holland, Amsterdam, 1965).Google Scholar