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Effects of Piezoelectric Fields in GaInN/GaN and GaN/AlGaN Heterostructures and Quantum Wells

  • Jin Seo Im (a1), H. Kollmer (a1), J. Off (a1), A. Sohmer (a1), F. Scholz (a1) and A. Hangleiter (a1)...

Abstract

The effects of piezoelectric fields on the static and dynamic optical properties of GaInN/GaN and GaN/AIGaN double heterostructures and single quantum wells are studied by time-resolved photoluminescence. We find a strong increase of the luminescence decay time of the dominating transition with well thickness by several orders of magnitude. For well thicknesses larger than about 5 nm, two emission lines with strongly differing decay times are observed, which are attributed to spatially direct and indirect transitions. Our experimental findings are consistently explained by a quantitative model based on the piezoelectric fields in strained wurtzite quantum wells.

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1. Nakamura, S., Mukai, T., and Senoh, M., Appl. Phys. Lett. 64, 1687 (1994).
2. Nakamura, S., Senoh, M., Nagahama, S.-I., Iwasa, N., Yamada, T., Matsushita, T., Sugimoto, Y., and Kiyoku, H., Jpn. J. Appl. Phys. 36, L1059 (1997).
3. Chichibu, S., Azuhata, T., Sota, T., and Nakamura, S., Appl. Phys. Lett. 69, 4188 (1996).
4. Narukawa, Y., Kawakami, Y., Funato, M., Fujita, S., Fujita, S., and Nakamura, S., Appl. Phys. Lett. 70, 981 (1997).
5. Takeuchi, T., Sota, S., Katsuragawa, M., Komori, M., Takeuchi, H., Amano, H., and Akasaki, I., Jpn. J. Appl. Phys. 36, L382 (1997).
6. Takeuchi, T., Sota, S., Sakai, H., Amano, H., Akasaki, I., Kaneko, Y., Nakagawa, S., Yamaoka, Y., and Yamada, N., in Proceedings of the Second International Conference on Nitride Semiconductors (1997), p. 418.
7. Im, J. S., Moritz, A., Steuber, F., Hhrle, V., Scholz, F., and Hangleiter, A., Appl. Phys. Lett. 70, 631 (1997).
8. Martin, G., Botchkarev, A., Rockett, A., and Morkog, H., Appl. Phys. Lett. 68, 2541 (1996).
9. Bernardini, F., Fiorentini, V., and Vanderbilt, D., Phys. Rev. B 56, R10024 (1997).
10. Nakamura, S., IEEE J. Sel. Topics Quantum Electron. 3, 435 (1997).

Effects of Piezoelectric Fields in GaInN/GaN and GaN/AlGaN Heterostructures and Quantum Wells

  • Jin Seo Im (a1), H. Kollmer (a1), J. Off (a1), A. Sohmer (a1), F. Scholz (a1) and A. Hangleiter (a1)...

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