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Effects of Phosphorus Exposure on Arsenic-Stabilized GaAs 2×4 Surface

  • A. H. Bensaoula (a1), A. Freundlich (a1), A. Bensaoula (a1) and V. Rossignol (a1)

Abstract

Phosphorus exposed GaAs (100) surfaces during a Chemical Beam Epitaxy growth process are studied using in-situ Reflection High Energy Electron Diffraction and ex-situ High Resolution X-ray Diffraction. It is shown that the phosphorus exposure of a GaAs (100) surface in the 500 – 580 °C temperature range results in the formation of one GaP monolayer.

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Effects of Phosphorus Exposure on Arsenic-Stabilized GaAs 2×4 Surface

  • A. H. Bensaoula (a1), A. Freundlich (a1), A. Bensaoula (a1) and V. Rossignol (a1)

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