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The Effects of Microstructures on Normal and Early Failures of Interconnects Caused by Electromigration

Published online by Cambridge University Press:  10 February 2011

Yongkun Liu  and
R. J. Diefendorf
Yongkun Liu
Affiliation:
Materials Science and Engineering Program, Clemson University, Clemson, South Carolina 29631-0907, yliu@ces.clemson.edu
R. J. Diefendorf
Affiliation:
Materials Science and Engineering Program, Clemson University, Clemson, South Carolina 29631-0907, yliu@ces.clemson.edu
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Abstract

Microstructure plays a key role in reliability of interconnects. However, a quantitative correlation between microstructure and reliability of interconnects is lacking. This paper develops a statistical description of effective diffusivity of interconnects by considering grain boundaries, bulk lattice and line interface diffusion, and introduces a microstructure-based electromigration lifetime prediction model for normal failures of interconnects. Further, the probability of early failure of interconnects due to a severe microstructural inhomogeneity is calculated. Using the sub-population failure model, the mean time to failure of interconnects, with a range of microstructures from polycrystalline to hyper-bamboo, are simulated. The reported increase in lifetimes of wide polycrystalline lines with increasing w/d is mainly ascribed to reservoir effects of bonding pads in test structures. Reported lifetime prediction model may be used as guidance for circuit design and accelerated testing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 516: Symposium E – Low Dielectric Constant Materials IV , January 1998 , 183
Copyright
Copyright © Materials Research Society 1998

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References

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