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Effects of Methane Concentration and Hydrogen Treatment on Preferred Orientation in Diamond Films Grown by Chemical Vapor Deposition

Published online by Cambridge University Press:  21 February 2011

D. Ganesan  and
S. C. Sharma
D. Ganesan
Affiliation:
Department of Physics and Materials Science & Engineering, Program The University of Texas at Arlington, Arlington, Texas 76019
S. C. Sharma
Affiliation:
Department of Physics and Materials Science & Engineering, Program The University of Texas at Arlington, Arlington, Texas 76019
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Abstract

We have conducted x-ray diffraction, Raman spectroscopy, and scanning electron microscopy analyses of diamond films grown by hot filament assisted chemical vapor deposition (HFCVD). We present results on the relative abundance of the (111), (220) and (400) faces in polycrystalline diamond films as functions of CH4 concentration. The intensity of the (111) peak can be varied from about 20% to 60% by adjusting CH4 in CH4/H2 mixtures. We also present results on preferred orientation in films grown under varying hydrogen treatments. We discuss correlations between the preferred orientation, FWHM of the diamond peak in the Raman spectrum, and surface morphology of the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 319
Copyright
Copyright © Materials Research Society 1994

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References

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