Hostname: page-component-848d4c4894-pjpqr Total loading time: 0 Render date: 2024-07-07T02:26:20.440Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Low-Temperature Surface Cleaning Using Ecr Hydrogen Plasma

Published online by Cambridge University Press:  21 February 2011

C. W. Nam ,
S. Ashok ,
W. Tsai  and
M. E. Day
C. W. Nam
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802
S. Ashok
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802
W. Tsai
Affiliation:
Varian Research Center, Palo Alto, CA 94304-1025
M. E. Day
Affiliation:
Varian Research Center, Palo Alto, CA 94304-1025
Get access

Abstract

ECR hydrogen plasma has been studied for removal of the native oxide and for in situ surface cleaning of Si. The process induced changes on electrical properties were inspected with Schottky diode and MOS capacitor structures. Current-Voltage (I-V) measurement of the Schottky diodes showed only a moderate change (about a decade) of the reverse saturation current after the plasma exposure. The deep level majority carrier traps induced by the treatment were measured by Deep Level Transient Spectroscopy (DLTS), and were found to have activation energies of 0.40 eV in the n-type samples and 0.54 eV in the p-type samples. As the plasma exposure time increased, the defect concentration increased and a broad shoulder appeared on the low temperature side. The extent of hydrogen permeation into the silicon was inspected by Capacitance-Voltage (C-V) measurement. Bias-temperature stress measure-ments of the p-Si Schottky samples reveal redistribution of hydrogen. Polysilicon gate-oxidesilicon samples subject to the hydrogen plasma exposure exhibit negligible change of the interface state density and flatband voltage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 315: Symposium Y – Surface Chemical Cleaning and Passivation for Semiconductor Processing , 1993 , 279
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Delfino, M., Salimian, S., Hodul, D., Ellingboe, A., and Tsai, W., J. Appl. Phys. 71, 1001 (1992)Google Scholar
2. Anthony, B., Breaux, L., Hsu, T., Banerjee, S., and Tasch, A., J. Vac. Sci. Technol. B 7, 621 (1989)Google Scholar
3. Cho, Jaewon, Schneider, T. P., VanderWeide, J., Jeon, Hyeongtag, and Nemanich, R. J., Appl. Phys. Lett. 59, 1995 (1991)CrossRefGoogle Scholar
4. Kunitsugu, Y., Suemune, I., Tanaka, Y., Kan, Y., and Yamanishi, M., J. Crys. Growth, 95, 91 (1989)Google Scholar
5. Chason, E. and Mayer, T. M., Appl. Phys. Lett. 62, 363 (1993)CrossRefGoogle Scholar
6. Tsai, W., Delfino, M., Day, M. E., Chung, B. C., Sheng, T., and Salimian, S., J. Vac. Sci. Technol. A (in press)Google Scholar
7. Ashok, S. and Srikanth, K., J. Appl. Phys. 66, 1491 (1989)Google Scholar
8. Fountain, G. G., Rudder, R. A., Hattangady, S. V., and Markunas, R. J., J. Appl. Phys. 63, 4744 (1988)Google Scholar
9. Johnson, N. M., Ponce, F. A., Street, R. A., and Nemanich, R. J., Phys. Rev. B 35, 4166 (1987)Google Scholar
10. Jeng, S. J., Oehrlein, G. S., and Scilla, G. J., Appl. Phys. Lett. 53, 1735 (1988)CrossRefGoogle Scholar
11. Rhoderick, E. H. and Williams, R. H., Metal-Semiconductor Contacts, 2nd ed. (Oxford, New York, 1988)Google Scholar
12. Nakagawa, O. S., Ashok, S., and Kruger, J. K., J. Appl. Phys. 69, 2057 (1991)CrossRefGoogle Scholar
13. Tavendale, A. J., Alexiev, D., and Williams, A. A., Appl. Phys. Lett. 47, 316 (1985)Google Scholar
14. Zundel, T., Mesh, A., Muller, J. C., and Siffert, P., Appl. Phys. A 48, 31 (1989)Google Scholar