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Effects of Laterally and Vertically Neighboring Quantum Dots on Formation of a New Quantum Dot

Published online by Cambridge University Press:  10 February 2011

Bo Yang  and
Vinod K. Tewary
Bo Yang*
Affiliation:
Materials Reliability Division, National Institute of Standards and Technology Boulder, CO 80305
Vinod K. Tewary
Affiliation:
Materials Reliability Division, National Institute of Standards and Technology Boulder, CO 80305
*
*Corresponding author. Current address: Department of Mechanical and Aerospace Engineering, Florida Institute of Technology, Melbourne, FL32901. Tel: 321-674-8092; Fax: 321-674-8813; Electronic mail: boyang@fit.edu.
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Abstract

We apply the elastic-energy-release rate (EERR) to identify the favored location of quantum dot (QD) formation in the presence of a laterally or vertically neighboring grown QD on a linear anisotropic elastic substrate. The EERR is defined as the relaxation energy per unit volume of QD growth. Numerical results for InAs QDs on a GaAs(001) substrate are reported. It is shown that the presence of a laterally neighboring QD inhibits the driving force for the formation of a new QD. In contrast, the presence of a buried (vertically) neighboring QD enhances the driving force for the formation of a new QD at its favorable location.

(Publication of the National Institute of Standards and Technology, an agency of the US Government; not subject to copyright.)

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 775: Symposium P – Self-Assembled Nanostructured Materials , 2003 , P9.50
Copyright
Copyright © Materials Research Society 2003

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