We apply the elastic-energy-release rate (EERR) to identify the favored location of quantum dot (QD) formation in the presence of a laterally or vertically neighboring grown QD on a linear anisotropic elastic substrate. The EERR is defined as the relaxation energy per unit volume of QD growth. Numerical results for InAs QDs on a GaAs(001) substrate are reported. It is shown that the presence of a laterally neighboring QD inhibits the driving force for the formation of a new QD. In contrast, the presence of a buried (vertically) neighboring QD enhances the driving force for the formation of a new QD at its favorable location.
(Publication of the National Institute of Standards and Technology, an agency of the US Government; not subject to copyright.)